Manufacturer: Diodes Incorporated
Win Source Part Number: 1323902-DMNH6042SPDQ
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 5.7A, 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W
Supplier Device Package: PowerDI5060-8
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: 8-PowerTDFN
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMNH6042SPDQ-13-ND,D
Base Product Number: DMNH6042
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant
MOSFET NCH 60V 5.7A POWERDI
N-Channel 60V 5.7A (Ta), 24A (Tc) 1.2W (Ta) Surface Mount PowerDI5060-8
N-Channel 60V 5.7A (Ta), 24A (Tc) 1.2W (Ta) Surface Mount PowerDI5060-8
N-Channel 60V 5.7A (Ta), 24A (Tc) 1.2W (Ta) Surface Mount PowerDI5060-8
MOSFET, DUAL, N-CH, 60V, 24A ROHS COMPLIANT: YES
MOSFET NCH 60V 5.7A POWERDI
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1323902-DMNH6042SPDQ-13 | DMNH6042SPDQ-13 | DMNH6042SPDQ-13DITR-ND | 28AK8454 | DMNH6042SPDQ-13 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, Dual, N-Ch, 60V, 24A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 1200 milliwatts | 1200 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | SOT3; 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | TO-3 | PowerDI5060-8 |
| Packing Method | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
