DIODES Incorporated Single FETs, MOSFETs DMNH6012SPSQ-13-2485

The DMNH6012SPSQ is a 60V, 175°C N-channel enhancement mode MOSFET in a PowerDI5060-8 package with a profile of less than 1.1mm, designed for automotive applications requiring high reliability. It has a maximum drain-source on-resistance of 11mΩ at VGS = 10V and 50A drain current, with a pulsed drain current rating of 120A. The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. It features a lead-free, RoHS-compliant finish and meets UL 94 V-0 flammability standards. Moisture sensitivity is Level 1 per J-STD-020, with thermal resistance junction-to-case of 3.8°C/W and junction-to-ambient of 26°C/W under high-power thermal bias conditions. The operating temperature range is -55°C to +175°C.