DIODES Incorporated Single FETs, MOSFETs DMNH6008SCT

Description
N-Channel 60V 130A (Tc) 210W (Tc) Through Hole TO-220-3
  • Single FETs, MOSFETs - DMNH6008SCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1055781-DMNH6008SCT - Win Source Electronics
    Win Source Electronics
  • Mosfet, Aec-Q101, N-Ch, 60V, To-220Ab; Transistor Polarity Diodes Inc. - 12AC0700 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMNH6008SCT - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 60V 130A (Tc) 210W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - DMNH6008SCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMNH6008SCT-ND
Single FETs, MOSFETs DMNH6008SCT-ND
N-Channel 60V 130A (Tc) 210W (Tc) Through Hole TO-220-3

N-Channel 60V 130A (Tc) 210W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1055781-DMNH6008SCT - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1055781-DMNH6008SCT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1055781-DMNH6008SCT
Win Source Part Number: 1055781-DMNH6008SCT Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 210W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 30 V Vgs (Max): 20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): IPP120N06S4H1AKSA2; STP100N6F7; DMTH6010SCT; DMT6010SCT; DMTH6005LCT; IRFB7545PBF; STP80N6F6; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Base Product Number: DMNH6008 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1055781-DMNH6008SCT
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 210W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 30 V
Vgs (Max): 20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPP120N06S4H1AKSA2; STP100N6F7; DMTH6010SCT; DMT6010SCT; DMTH6005LCT; IRFB7545PBF; STP80N6F6;
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMNH6008
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Mosfet, Aec-Q101, N-Ch, 60V, To-220Ab; Transistor Polarity Diodes Inc. - 12AC0700 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 60V, To-220Ab; Transistor Polarity Diodes Inc.
12AC0700
Mosfet, Aec-Q101, N-Ch, 60V, To-220Ab; Transistor Polarity Diodes Inc. 12AC0700
MOSFET, AEC-Q101, N-CH, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMNH6008SCT - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMNH6008SCT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMNH6008SCT
MOSFET N-CH 60V 130A TO220AB

MOSFET N-CH 60V 130A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMNH6008SCT-ND 1055781-DMNH6008SCT 12AC0700 DMNH6008SCT
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Mosfet, Aec-Q101, N-Ch, 60V, To-220Ab; Transistor Polarity Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-3; TO-220 TO-220; TO-220-3
Transistor Grade / Operating Range Automotive
PD 210000 milliwatts
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