N-channel enhancement mode MOSFET designed for high-efficiency power management in automotive applications, rated for 150V drain-source voltage and continuous drain current of up to 18A at 25°C junction temperature. Housed in a TO-252 (DPAK) package measuring approximately 0.33 grams, with a maximum junction temperature of 175°C. Features low on-resistance of 97mΩ at 10V gate-source voltage and 110mΩ at 6V, 100% UIS tested, and RoHS compliant with a lead-free, halogen- and antimony-free finish. Thermal resistance from junction to case is 1.7°C/W under rated conditions.
MOSFET, N-CH, 150V, 18A, TO-252 ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 36AJ8866 |
| Product Name | Mosfet, N-Ch, 150V, 18A, To-252 Rohs Compliant Diodes Inc. |
| Package Type | TO-3; TO-252 (DPAK) |
