Manufacturer: Diodes Incorporated
Win Source Part Number: 1323903-DMNH10H028SK
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W
Supplier Device Package: TO-252-3
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 81
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Other Part Number: DMNH10H028SK3-13DIDK
Base Product Number: DMNH10
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
N-Channel 100V 55A (Tc) 2W (Ta) Surface Mount TO-252-3
MOSFET N-CH 100V 55A TO252 Product overview: DMNH10H028SK3-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 55A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 55A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMNH10H028SK3-13
MOSFET N-CH 100V 55A TO252
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| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1323903-DMNH10H028SK3-13 | DMNH10H028SK3-13DITR-ND | 278-DMNH10H028SK3-13 | DMNH10H028SK3-13 | DMNH10H028SK3-13 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 100V 55A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| PD | 2000 milliwatts | 2 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | SOT3; TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | 36 nC @ 10 V |