DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single DMNH10H028SK3-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1323903-DMNH10H028SK 3-13 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Power Dissipation (Max): 2W Supplier Device Package: TO-252-3 Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 81 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Other Part Number: DMNH10H028SK3-13DIDK R,DMNH10H028SK3-13DI CT,DMNH10H028SK3-13D ITR Base Product Number: DMNH10 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1323903-DMNH10H028SK 3-13 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Power Dissipation (Max): 2W Supplier Device Package: TO-252-3 Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 81 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Other Part Number: DMNH10H028SK3-13DIDK R,DMNH10H028SK3-13DI CT,DMNH10H028SK3-13D ITR Base Product Number: DMNH10 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Suppliers

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Product
Description
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323903-DMNH10H028SK3-13 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323903-DMNH10H028SK3-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323903-DMNH10H028SK3-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1323903-DMNH10H028SK 3-13 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Power Dissipation (Max): 2W Supplier Device Package: TO-252-3 Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 81 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Other Part Number: DMNH10H028SK3-13DIDK R,DMNH10H028SK3-13DI CT,DMNH10H028SK3-13D ITR Base Product Number: DMNH10 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: Diodes Incorporated
Win Source Part Number: 1323903-DMNH10H028SK3-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W
Supplier Device Package: TO-252-3
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 81
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Other Part Number: DMNH10H028SK3-13DIDKR,DMNH10H028SK3-13DICT,DMNH10H028SK3-13DITR
Base Product Number: DMNH10
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

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Thief River Falls, MN, United States
Single FETs, MOSFETs
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Single FETs, MOSFETs DMNH10H028SK3-13DITR-ND
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMNH10H028SK3-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMNH10H028SK3-13
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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1323903-DMNH10H028SK3-13 DMNH10H028SK3-13DITR-ND DMNH10H028SK3-13 DMNH10H028SK3-13
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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