DIODES Incorporated 60V 0.23A MOSFET Transistor DMN67D8LDW-13

MOSFET 2N-CH 60V 0.23A SOT363 Product overview: DMN67D8LDW-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.23A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN67D8LDW-13 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 60V 0.23A SOT363

Mosfet Array 2 N-Channel (Dual) 60V 230mA 320mW Surface Mount SOT-363

MOSFET 2N-CH 60V 0.23A SOT363

Manufacturer: Diodes Incorporated
Win Source Part Number: 1323901-DMN67D8LDW-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 320mW
Supplier Device Package: SOT-363
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Base Product Number: DMN67
RoHS Status: ROHS3 Compliant