DIODES Incorporated FET, MOSFET Arrays DMN66D0LDW-7

Description
MOSFET 2N-CH 60V 0.115A SOT363
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Description
MOSFET 2N-CH 60V 0.115A SOT363
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 31-DMN66D0LDW-7CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN66D0LDW-7CT-ND
FET, MOSFET Arrays 31-DMN66D0LDW-7CT-ND
MOSFET 2N-CH 60V 0.115A SOT363

MOSFET 2N-CH 60V 0.115A SOT363

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN66D0LDW-7DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN66D0LDW-7DKR-ND
FET, MOSFET Arrays 31-DMN66D0LDW-7DKR-ND
MOSFET 2N-CH 60V 0.115A SOT363

MOSFET 2N-CH 60V 0.115A SOT363

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN66D0LDW-7TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN66D0LDW-7TR-ND
FET, MOSFET Arrays 31-DMN66D0LDW-7TR-ND
Mosfet Array 2 N-Channel (Dual) 60V 115mA (Ta) 250mW (Ta) Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 60V 115mA (Ta) 250mW (Ta) Surface Mount SOT-363

Buy Now Datasheet
Singapore
60V 0.115A MOSFET Transistor
289-DMN66D0LDW-7
60V 0.115A MOSFET Transistor 289-DMN66D0LDW-7
MOSFET 2N-CH 60V 0.115A SOT363 Product overview: DMN66D0LDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.115A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.115A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN66D0LDW-7 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 60V 0.115A SOT363 Product overview: DMN66D0LDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.115A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.115A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN66D0LDW-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN66D0LDW-7 - 014461-DMN66D0LDW-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN66D0LDW-7
014461-DMN66D0LDW-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN66D0LDW-7 014461-DMN66D0LDW-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014461-DMN66D0LDW-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 115mA Gate-Source Threshold Voltage: 2V @ 250μA Max Input Capacitance: 23pF @ 25V Maximum Rds On at Id,Vgs: 5 Ohm @ 115mA, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 014461-DMN66D0LDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 115mA
Gate-Source Threshold Voltage: 2V @ 250μA
Max Input Capacitance: 23pF @ 25V
Maximum Rds On at Id,Vgs: 5 Ohm @ 115mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 250mW 60Vdss

MOSFET 250mW 60Vdss

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN66D0LDW-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN66D0LDW-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN66D0LDW-7
MOSFET 2N-CH 60V 0.115A SOT363

MOSFET 2N-CH 60V 0.115A SOT363

Supplier's Site
Mosfet, Dual, N-Ch, 60V, 0.115A Rohs Compliant Diodes Inc. - 28AK8651 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N-Ch, 60V, 0.115A Rohs Compliant Diodes Inc.
28AK8651
Mosfet, Dual, N-Ch, 60V, 0.115A Rohs Compliant Diodes Inc. 28AK8651
MOSFET, DUAL, N-CH, 60V, 0.115A ROHS COMPLIANT: YES

MOSFET, DUAL, N-CH, 60V, 0.115A ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 31-DMN66D0LDW-7CT-ND 289-DMN66D0LDW-7 014461-DMN66D0LDW-7 DMN66D0LDW-7 DMN66D0LDW-7 28AK8651
Product Name FET, MOSFET Arrays 60V 0.115A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN66D0LDW-7 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual, N-Ch, 60V, 0.115A Rohs Compliant Diodes Inc.
Package Type 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) SOT3; SOT-363 Automotive TO-3
Transistor Grade / Operating Range Automotive
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement
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