DIODES Incorporated FET, MOSFET Arrays DMN66D0LDW-7

Description
MOSFET 2N-CH 60V 0.115A SOT363
Request a Quote Datasheet
Description
MOSFET 2N-CH 60V 0.115A SOT363
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 31-DMN66D0LDW-7CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN66D0LDW-7CT-ND
FET, MOSFET Arrays 31-DMN66D0LDW-7CT-ND
MOSFET 2N-CH 60V 0.115A SOT363

MOSFET 2N-CH 60V 0.115A SOT363

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN66D0LDW-7DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN66D0LDW-7DKR-ND
FET, MOSFET Arrays 31-DMN66D0LDW-7DKR-ND
MOSFET 2N-CH 60V 0.115A SOT363

MOSFET 2N-CH 60V 0.115A SOT363

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN66D0LDW-7TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN66D0LDW-7TR-ND
FET, MOSFET Arrays 31-DMN66D0LDW-7TR-ND
Mosfet Array 2 N-Channel (Dual) 60V 115mA (Ta) 250mW (Ta) Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 60V 115mA (Ta) 250mW (Ta) Surface Mount SOT-363

Buy Now Datasheet
Singapore
60V 0.115A MOSFET Transistor
289-DMN66D0LDW-7
60V 0.115A MOSFET Transistor 289-DMN66D0LDW-7
MOSFET 2N-CH 60V 0.115A SOT363 Product overview: DMN66D0LDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.115A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.115A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN66D0LDW-7 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 60V 0.115A SOT363 Product overview: DMN66D0LDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.115A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.115A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN66D0LDW-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN66D0LDW-7 - 014461-DMN66D0LDW-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN66D0LDW-7
014461-DMN66D0LDW-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN66D0LDW-7 014461-DMN66D0LDW-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014461-DMN66D0LDW-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 115mA Gate-Source Threshold Voltage: 2V @ 250μA Max Input Capacitance: 23pF @ 25V Maximum Rds On at Id,Vgs: 5 Ohm @ 115mA, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 014461-DMN66D0LDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 115mA
Gate-Source Threshold Voltage: 2V @ 250μA
Max Input Capacitance: 23pF @ 25V
Maximum Rds On at Id,Vgs: 5 Ohm @ 115mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN66D0LDW-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN66D0LDW-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN66D0LDW-7
MOSFET 2N-CH 60V 0.115A SOT363

MOSFET 2N-CH 60V 0.115A SOT363

Supplier's Site
Mosfet, Dual, N-Ch, 60V, 0.115A Rohs Compliant Diodes Inc. - 28AK8651 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N-Ch, 60V, 0.115A Rohs Compliant Diodes Inc.
28AK8651
Mosfet, Dual, N-Ch, 60V, 0.115A Rohs Compliant Diodes Inc. 28AK8651
MOSFET, DUAL, N-CH, 60V, 0.115A ROHS COMPLIANT: YES

MOSFET, DUAL, N-CH, 60V, 0.115A ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 250mW 60Vdss

MOSFET 250mW 60Vdss

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 31-DMN66D0LDW-7CT-ND 289-DMN66D0LDW-7 014461-DMN66D0LDW-7 DMN66D0LDW-7 28AK8651 DMN66D0LDW-7
Product Name FET, MOSFET Arrays 60V 0.115A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN66D0LDW-7 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual, N-Ch, 60V, 0.115A Rohs Compliant Diodes Inc. MOSFET
Package Type 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) SOT3; SOT-363 Automotive TO-3
Transistor Grade / Operating Range Automotive
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SC2688-AZ - 906351-2SC2688-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1356053-AIKB30N65DH5ATMA1 - Win Source Electronics
Specs
VCES 650 volts
Package Type SOT3
View Details
6 suppliers
GaAs Fet Switches - KCB816 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 4000 MHz
View Details