DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays DMN65D8LDWQ-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1324499-DMN65D8LDWQ- 7 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power - Max: 300mW Supplier Device Package: SOT-363 Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: 6-TSSOP, SC-88, SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 80 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: DMN65 RoHS Status: ROHS3 Compliant
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1324499-DMN65D8LDWQ-7 - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - 31-DMN65D8LDWQ-7CT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 31-DMN65D8LDWQ-7TR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 31-DMN65D8LDWQ-7DKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - DMN65D8LDWQ-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN65D8LDWQ-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, Dual, N-Ch, 60V, 0.18A Rohs Compliant Diodes Inc. - 28AK8645 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1324499-DMN65D8LDWQ- 7 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power - Max: 300mW Supplier Device Package: SOT-363 Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: 6-TSSOP, SC-88, SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 80 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: DMN65 RoHS Status: ROHS3 Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1324499-DMN65D8LDWQ-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1324499-DMN65D8LDWQ-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1324499-DMN65D8LDWQ-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1324499-DMN65D8LDWQ- 7 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power - Max: 300mW Supplier Device Package: SOT-363 Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: 6-TSSOP, SC-88, SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 80 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: DMN65 RoHS Status: ROHS3 Compliant

Manufacturer: Diodes Incorporated
Win Source Part Number: 1324499-DMN65D8LDWQ-7
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power - Max: 300mW
Supplier Device Package: SOT-363
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: DMN65
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN65D8LDWQ-7CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN65D8LDWQ-7CT-ND
FET, MOSFET Arrays 31-DMN65D8LDWQ-7CT-ND
MOSFET 2N-CH 60V 0.18A SOT363

MOSFET 2N-CH 60V 0.18A SOT363

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN65D8LDWQ-7TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN65D8LDWQ-7TR-ND
FET, MOSFET Arrays 31-DMN65D8LDWQ-7TR-ND
Mosfet Array

Mosfet Array

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN65D8LDWQ-7DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN65D8LDWQ-7DKR-ND
FET, MOSFET Arrays 31-DMN65D8LDWQ-7DKR-ND
MOSFET 2N-CH 60V 0.18A SOT363

MOSFET 2N-CH 60V 0.18A SOT363

Buy Now Datasheet
FET, MOSFET Arrays - DMN65D8LDWQ-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN65D8LDWQ-7
FET, MOSFET Arrays DMN65D8LDWQ-7
MOSFET 2N-CH 60V 180MA SOT363

MOSFET 2N-CH 60V 180MA SOT363

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN65D8LDWQ-7
MOSFET DMN65D8LDWQ-7
MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd

MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN65D8LDWQ-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN65D8LDWQ-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN65D8LDWQ-7
MOSFET 2N-CH 60V 0.18A SOT363

MOSFET 2N-CH 60V 0.18A SOT363

Supplier's Site
Mosfet, Dual, N-Ch, 60V, 0.18A Rohs Compliant Diodes Inc. - 28AK8645 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N-Ch, 60V, 0.18A Rohs Compliant Diodes Inc.
28AK8645
Mosfet, Dual, N-Ch, 60V, 0.18A Rohs Compliant Diodes Inc. 28AK8645
MOSFET, DUAL, N-CH, 60V, 0.18A ROHS COMPLIANT: YES

MOSFET, DUAL, N-CH, 60V, 0.18A ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1324499-DMN65D8LDWQ-7 31-DMN65D8LDWQ-7CT-ND DMN65D8LDWQ-7 DMN65D8LDWQ-7 DMN65D8LDWQ-7 28AK8645
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual, N-Ch, 60V, 0.18A Rohs Compliant Diodes Inc.
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 Automotive TO-3
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Unlock Full Specs
to access all available technical data