MOSFET 2N-CH 60V 180MA SOT363
Manufacturer: Diodes Incorporated
Win Source Part Number: 1324499-DMN65D8LDWQ-
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power - Max: 300mW
Supplier Device Package: SOT-363
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: DMN65
RoHS Status: ROHS3 Compliant
MOSFET 2N-CH 60V 0.18A SOT363 Product overview: DMN65D8LDWQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.18A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN65D8LDWQ-7 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 60V 0.18A SOT363
MOSFET 2N-CH 60V 0.18A SOT363
MOSFET 2N-CH 60V 0.18A SOT363
MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
MOSFET, DUAL, N-CH, 60V, 0.18A ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN65D8LDWQ-7 | 1324499-DMN65D8LDWQ-7 | 289-DMN65D8LDWQ-7 | 31-DMN65D8LDWQ-7CT-ND | DMN65D8LDWQ-7 | DMN65D8LDWQ-7 | 28AK8645 |
| Product Name | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | 60V 0.18A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual, N-Ch, 60V, 0.18A Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 180 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
