Manufacturer: Diodes Incorporated
Win Source Part Number: 103347-DMN65D8LDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN65D8LDW
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 180mA
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 0.87nC @ 10V
Max Input Capacitance: 22pF @ 25V
Maximum Rds On at Id,Vgs: 6 Ohm @ 115mA, 10V
Alternative Parts (Cross-Reference): 2N7002DW; NX138AKSF; NX138AKSX; NX7002AKS;
Introduction Date: September 20, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 60V 180mA 300mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 60V 180mA 300mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 60V 180mA 300mW Surface Mount SOT-363
MOSFET 2N-CH 60V 0.18A SOT363
MOSFET 2N-CH 60V 0.18A SOT363 Product overview: DMN65D8LDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.18A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN65D8LDW-7 can be used for catalog matching and distributor lookup.
MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
MOSFET 2N-CH 60V 0.18A SOT363
MOSFET, DUAL N-CH, 60V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:180mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 103347-DMN65D8LDW-7 | DMN65D8LDW-7DICT-ND | DMN65D8LDW-7 | 289-DMN65D8LDW-7 | DMN65D8LDW-7 | DMN65D8LDW-7 | 82Y6583 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN65D8LDW-7 | FET, MOSFET Arrays | FET, MOSFET Arrays | 60V 0.18A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 60V, Sot363; Transistor Polarity Diodes Inc. |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 300 milliwatts | 400 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | TO-3 |
