MOSFET 2N-CH 60V 0.18A SOT363
Manufacturer: Diodes Incorporated
Win Source Part Number: 103347-DMN65D8LDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN65D8LDW
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 180mA
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 0.87nC @ 10V
Max Input Capacitance: 22pF @ 25V
Maximum Rds On at Id,Vgs: 6 Ohm @ 115mA, 10V
Alternative Parts (Cross-Reference): 2N7002DW; NX138AKSF; NX138AKSX; NX7002AKS;
Introduction Date: September 20, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 60V 180mA 300mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 60V 180mA 300mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 60V 180mA 300mW Surface Mount SOT-363
MOSFET, DUAL N-CH, 60V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:180mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET 2N-CH 60V 0.18A SOT363
MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN65D8LDW-7 | 103347-DMN65D8LDW-7 | DMN65D8LDW-7DICT-ND | 82Y6583 | DMN65D8LDW-7 | DMN65D8LDW-7 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN65D8LDW-7 | FET, MOSFET Arrays | Mosfet, Dual N-Ch, 60V, Sot363; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 180 milliamps | 180 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
