DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN65D8L-7 DMN65D8L-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 105087-DMN65D8L-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Family Name: DMN65D8L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 310mA (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 0.87nC @ 10V Max Input Capacitance: 22pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 115mA, 10V Alternative Parts (Cross-Reference): NX138BKVL; RK7002BMT116; 2N7002K,215; 2N7002E-E3; Introduction Date: January 13, 2016 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN65D8L-7 - 105087-DMN65D8L-7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMN65D8L-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - DMN65D8L-7DITR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN65D8L-7DICT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN65D8L-7DIDKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN65D8L-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 20V, Sot-23-3; Transistor Polarity Diodes Inc. - 82Y6582 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 105087-DMN65D8L-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Family Name: DMN65D8L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 310mA (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 0.87nC @ 10V Max Input Capacitance: 22pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 115mA, 10V Alternative Parts (Cross-Reference): NX138BKVL; RK7002BMT116; 2N7002K,215; 2N7002E-E3; Introduction Date: January 13, 2016 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN65D8L-7 - 105087-DMN65D8L-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN65D8L-7
105087-DMN65D8L-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN65D8L-7 105087-DMN65D8L-7
Manufacturer: Diodes Incorporated Win Source Part Number: 105087-DMN65D8L-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Family Name: DMN65D8L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 310mA (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 0.87nC @ 10V Max Input Capacitance: 22pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 115mA, 10V Alternative Parts (Cross-Reference): NX138BKVL; RK7002BMT116; 2N7002K,215; 2N7002E-E3; Introduction Date: January 13, 2016 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 105087-DMN65D8L-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370mW (Ta)
Family Name: DMN65D8L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 310mA (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 0.87nC @ 10V
Max Input Capacitance: 22pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 115mA, 10V
Alternative Parts (Cross-Reference): NX138BKVL; RK7002BMT116; 2N7002K,215; 2N7002E-E3;
Introduction Date: January 13, 2016
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - DMN65D8L-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN65D8L-7
Single FETs, MOSFETs DMN65D8L-7
MOSFET N-CH 60V 310MA SOT23

MOSFET N-CH 60V 310MA SOT23

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN65D8L-7DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN65D8L-7DITR-ND
Single FETs, MOSFETs DMN65D8L-7DITR-ND
N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN65D8L-7DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN65D8L-7DICT-ND
Single FETs, MOSFETs DMN65D8L-7DICT-ND
N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN65D8L-7DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN65D8L-7DIDKR-ND
Single FETs, MOSFETs DMN65D8L-7DIDKR-ND
N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN65D8L-7
MOSFET DMN65D8L-7
MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA

MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN65D8L-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN65D8L-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN65D8L-7
MOSFET N-CH 60V 310MA SOT23

MOSFET N-CH 60V 310MA SOT23

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
DMN65D8L-7
Triode/MOS Tube/Transistor >> MOSFETs DMN65D8L-7
60V 310mA 3Ω@10V,115mA 370mW 2V@250uA N Channel SOT-23 MOSFETs ROHS

60V 310mA 3Ω@10V,115mA 370mW 2V@250uA N Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
Mosfet, N-Ch, 20V, Sot-23-3; Transistor Polarity Diodes Inc. - 82Y6582 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, Sot-23-3; Transistor Polarity Diodes Inc.
82Y6582
Mosfet, N-Ch, 20V, Sot-23-3; Transistor Polarity Diodes Inc. 82Y6582
MOSFET, N-CH, 20V, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:310mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 20V, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:310mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 105087-DMN65D8L-7 DMN65D8L-7 DMN65D8L-7DITR-ND DMN65D8L-7 DMN65D8L-7 DMN65D8L-7 82Y6582
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN65D8L-7 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Mosfet, N-Ch, 20V, Sot-23-3; Transistor Polarity Diodes Inc.
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 370 milliwatts 370 milliwatts 370 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 0.87 nC @ 10 V SOT23 TO-3; SOT23
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