DIODES Incorporated Single FETs, MOSFETs DMN65D0LQ-13

The DMN65D0LQ-13 is a 60V N-channel enhancement mode MOSFET in a SOT23 package, designed for automotive applications requiring AEC-Q101 qualification and PPAP capability. It features a maximum continuous drain current of 238mA at TA = +25°C, a gate threshold voltage range of 1.0V to 2.5V, and on-resistance of 5.0Ω at VGS = 10V and 7.5Ω at VGS = 5V. The device has a total power dissipation of 0.5mW with a junction-to-ambient thermal resistance of 276°C/W on a minimum recommended pad layout. It operates from -55°C to +150°C, is RoHS compliant, halogen- and antimony-free, and meets UL 94 V-0 flammability rating. Packaged in tape and reel for 10,000 units.