DIODES Incorporated 30V 0.26A MOSFET Transistor DMN63D8LV-7

MOSFET 2N-CH 30V 0.26A SOT563 Product overview: DMN63D8LV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.26A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN63D8LV-7 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 30V 260mA 450mW Surface Mount SOT-563

Mosfet Array 2 N-Channel (Dual) 30V 260mA 450mW Surface Mount SOT-563

Mosfet Array 2 N-Channel (Dual) 30V 260mA 450mW Surface Mount SOT-563

MOSFET 2N-CH 30V 0.26A SOT563

Manufacturer: Diodes Incorporated
Win Source Part Number: 113448-DMN63D8LV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN63D8LV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 450mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 260mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.87nC @ 10V
Max Input Capacitance: 22pF @ 25V
Maximum Rds On at Id,Vgs: 2.8 Ohm @ 250mA, 10V
Alternative Parts (Cross-Reference): DMN63D8LV-13;
Introduction Date: August 28, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient