Manufacturer: Diodes Incorporated
Win Source Part Number: 113448-DMN63D8LV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN63D8LV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 450mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 260mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.87nC @ 10V
Max Input Capacitance: 22pF @ 25V
Maximum Rds On at Id,Vgs: 2.8 Ohm @ 250mA, 10V
Alternative Parts (Cross-Reference): DMN63D8LV-13;
Introduction Date: August 28, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 30V 260mA 450mW Surface Mount SOT-563
Mosfet Array 2 N-Channel (Dual) 30V 260mA 450mW Surface Mount SOT-563
Mosfet Array 2 N-Channel (Dual) 30V 260mA 450mW Surface Mount SOT-563
MOSFET 2N-CH 30V 0.26A SOT563
30V 260mA 450mW 2.8Ω@10V,200mA 1.5V@250uA 2 N-Channel SOT-563 MOSFETs ROHS
MOSFET 2N-CH 30V 0.26A SOT563
MOSFET Dual N-Ch Enh Mode 30V 4.2Ohm 200mA
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 113448-DMN63D8LV-7 | DMN63D8LV-7DITR-ND | DMN63D8LV-7 | DMN63D8LV-7 | DMN63D8LV-7 | DMN63D8LV-7 | 82Y6581 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN63D8LV-7 | FET, MOSFET Arrays | FET, MOSFET Arrays | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, 30V, Sot563; Transistor Polarity Diodes Inc. |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 450 milliwatts | 450 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; SOT-563 | SOT-563, SOT-666 | SOT-563, SOT-666 | TO-3 |
