MOSFET 2N-CH 30V 0.22A SOT363
Manufacturer: Diodes Incorporated
Win Source Part Number: 801867-DMN63D8LDW-13
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW
Supplier Device Package: SOT-363
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-TSSOP, SC-88, SOT-363
Popularity: High
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.8Ohm at 250mA, 10V
Gate Charge (Qg) (Maximum) at Vgs: 870nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 22pF at 25V
Current - Continuous Drain (Id) at 25°C: 220mA
Vgs(th) (Maximum) at Id: 1.5V at 250μA
Mosfet Array 2 N-Channel (Dual) 30V 220mA 300mW Surface Mount SOT-363
MOSFET 2N-CH 30V 0.22A SOT363
MOSFET 2N-CH 30V 0.22A SOT363
MOSFET, DUAL, N-CH, 30V, 0.22A ROHS COMPLIANT: YES
MOSFET 2N-CH 30V 0.22A SOT363
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN63D8LDW-13 | 801867-DMN63D8LDW-13 | 31-DMN63D8LDW-13TR-ND | DMN63D8LDW-13 | 28AK8642 | DMN63D8LDW-13 |
| Product Name | FET, MOSFET Arrays | FETs - Arrays - DMN63D8LDW-13 | FET, MOSFET Arrays | MOSFET | Mosfet, Dual, N-Ch, 30V, 0.22A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | |||||
| IDSS | 220 milliamps |
