Manufacturer: Diodes Incorporated
Win Source Part Number: 801867-DMN63D8LDW-13
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW
Supplier Device Package: SOT-363
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-TSSOP, SC-88, SOT-363
Popularity: High
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.8Ohm at 250mA, 10V
Gate Charge (Qg) (Maximum) at Vgs: 870nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 22pF at 25V
Current - Continuous Drain (Id) at 25°C: 220mA
Vgs(th) (Maximum) at Id: 1.5V at 250μA
MOSFET 2N-CH 30V 0.22A SOT363
Mosfet Array 2 N-Channel (Dual) 30V 220mA 300mW Surface Mount SOT-363
MOSFET 2N-CH 30V 0.22A SOT363
MOSFET 2N-CH 30V 0.22A SOT363
MOSFET, DUAL, N-CH, 30V, 0.22A ROHS COMPLIANT: YES
MOSFET 2N-CH 30V 0.22A SOT363
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 801867-DMN63D8LDW-13 | DMN63D8LDW-13 | 31-DMN63D8LDW-13TR-ND | 28AK8642 | DMN63D8LDW-13 | DMN63D8LDW-13 |
| Product Name | FETs - Arrays - DMN63D8LDW-13 | FET, MOSFET Arrays | FET, MOSFET Arrays | Mosfet, Dual, N-Ch, 30V, 0.22A Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| MOSFET Operating Mode | Enhancement | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | TO-3 |
