MOSFET 2N-CH 30V 0.22A SOT363 Product overview: DMN63D8LDW-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.22A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN63D8LDW-13 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 0.22A SOT363
Manufacturer: Diodes Incorporated
Win Source Part Number: 801867-DMN63D8LDW-13
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW
Supplier Device Package: SOT-363
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-TSSOP, SC-88, SOT-363
Popularity: High
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.8Ohm at 250mA, 10V
Gate Charge (Qg) (Maximum) at Vgs: 870nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 22pF at 25V
Current - Continuous Drain (Id) at 25°C: 220mA
Vgs(th) (Maximum) at Id: 1.5V at 250μA
Mosfet Array 2 N-Channel (Dual) 30V 220mA 300mW Surface Mount SOT-363
MOSFET 2N-CH 30V 0.22A SOT363
MOSFET 2N-CH 30V 0.22A SOT363
MOSFET, DUAL, N-CH, 30V, 0.22A ROHS COMPLIANT: YES
MOSFET 2N-CH 30V 0.22A SOT363
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-DMN63D8LDW-13 | DMN63D8LDW-13 | 801867-DMN63D8LDW-13 | 31-DMN63D8LDW-13TR-ND | DMN63D8LDW-13 | 28AK8642 | DMN63D8LDW-13 |
| Product Name | 30V 0.22A MOSFET Transistor | FET, MOSFET Arrays | FETs - Arrays - DMN63D8LDW-13 | FET, MOSFET Arrays | MOSFET | Mosfet, Dual, N-Ch, 30V, 0.22A Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 400 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
