DIODES Incorporated FETs - Single - DMN63D8L-7 DMN63D8L-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 802500-DMN63D8L-7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Power Dissipation (Maximum): 350mW Popularity: High Fake Threat In the Open Market: 85 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 2.8Ohm at 250mA, 10V Gate Charge (Qg) (Maximum) at Vgs: 0.9nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 23.2pF at 25V Current - Continuous Drain (Id) at 25°C: 350mA Vgs(th) (Maximum) at Id: 1.5V at 250μA Maximum Vgs: ±20V
  • FETs - Single - DMN63D8L-7 - 802500-DMN63D8L-7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMN63D8L-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - DMN63D8L-7DIDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN63D8L-7DITR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN63D8L-7DICT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN63D8L-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 0.35A, Sot-23 Rohs Compliant Diodes Inc. - 28AK8641 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 802500-DMN63D8L-7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Power Dissipation (Maximum): 350mW Popularity: High Fake Threat In the Open Market: 85 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 2.8Ohm at 250mA, 10V Gate Charge (Qg) (Maximum) at Vgs: 0.9nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 23.2pF at 25V Current - Continuous Drain (Id) at 25°C: 350mA Vgs(th) (Maximum) at Id: 1.5V at 250μA Maximum Vgs: ±20V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - DMN63D8L-7 - 802500-DMN63D8L-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - DMN63D8L-7
802500-DMN63D8L-7
FETs - Single - DMN63D8L-7 802500-DMN63D8L-7
Manufacturer: Diodes Incorporated Win Source Part Number: 802500-DMN63D8L-7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Power Dissipation (Maximum): 350mW Popularity: High Fake Threat In the Open Market: 85 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 2.8Ohm at 250mA, 10V Gate Charge (Qg) (Maximum) at Vgs: 0.9nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 23.2pF at 25V Current - Continuous Drain (Id) at 25°C: 350mA Vgs(th) (Maximum) at Id: 1.5V at 250μA Maximum Vgs: ±20V

Manufacturer: Diodes Incorporated
Win Source Part Number: 802500-DMN63D8L-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 350mW
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.8Ohm at 250mA, 10V
Gate Charge (Qg) (Maximum) at Vgs: 0.9nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 23.2pF at 25V
Current - Continuous Drain (Id) at 25°C: 350mA
Vgs(th) (Maximum) at Id: 1.5V at 250μA
Maximum Vgs: ±20V

Buy Now
Single FETs, MOSFETs - DMN63D8L-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN63D8L-7
Single FETs, MOSFETs DMN63D8L-7
MOSFET N-CH 30V 350MA SOT23

MOSFET N-CH 30V 350MA SOT23

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN63D8L-7DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN63D8L-7DIDKR-ND
Single FETs, MOSFETs DMN63D8L-7DIDKR-ND
N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN63D8L-7DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN63D8L-7DITR-ND
Single FETs, MOSFETs DMN63D8L-7DITR-ND
N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN63D8L-7DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN63D8L-7DICT-ND
Single FETs, MOSFETs DMN63D8L-7DICT-ND
N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN63D8L-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN63D8L-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN63D8L-7
MOSFET N-CH 30V 350MA SOT23

MOSFET N-CH 30V 350MA SOT23

Supplier's Site
Mosfet, N-Ch, 30V, 0.35A, Sot-23 Rohs Compliant Diodes Inc. - 28AK8641 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 0.35A, Sot-23 Rohs Compliant Diodes Inc.
28AK8641
Mosfet, N-Ch, 30V, 0.35A, Sot-23 Rohs Compliant Diodes Inc. 28AK8641
MOSFET, N-CH, 30V, 0.35A, SOT-23 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 0.35A, SOT-23 ROHS COMPLIANT: YES

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN63D8L-7
MOSFET DMN63D8L-7
MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW

MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 802500-DMN63D8L-7 DMN63D8L-7 DMN63D8L-7DIDKR-ND DMN63D8L-7 28AK8641 DMN63D8L-7
Product Name FETs - Single - DMN63D8L-7 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 0.35A, Sot-23 Rohs Compliant Diodes Inc. MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
PD 350 milliwatts 350 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 0.9 nC @ 10 V TO-3; SOT23
Unlock Full Specs
to access all available technical data