Win Source Part Number: 1055777-DMN63D8L-13
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 10,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): 3LN01C-TB-H; DMN61D9U-7; DMN62D0U-7; DMN62D0U-13; NX138BKR; BSS138NH6433XTMA1; MMBF170LT3DMN63D8L13
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: DMN63D8L-13DI
Base Product Number: DMN63
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
MOSFET N-CH 30V 350MA SOT23-3
MOSFET N-CH 30V 350MA SOT23-3
MOSFET N-CH 30V 350MA SOT23-3
N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
MOSFET N-CH 30V 350MA SOT23-3 Product overview: DMN63D8L-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 350MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 350MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN63D8L-13 can be used for catalog matching and distributor lookup.
MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
MOSFET N-CH 30V 350MA SOT23-3
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1055777-DMN63D8L-13 | DMN63D8L-13 | 31-DMN63D8L-13CT-ND | 278-DMN63D8L-13 | DMN63D8L-13 | DMN63D8L-13 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 350MA SOT23 MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| PD | 350 milliwatts | 350 milliwatts | 350 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |