DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single DMN63D8L-13

Win Source Part Number: 1055777-DMN63D8L-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 10,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): 3LN01C-TB-H; DMN61D9U-7; DMN62D0U-7; DMN62D0U-13; NX138BKR; BSS138NH6433XTMA1; MMBF170LT3DMN63D8L13;
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: DMN63D8L-13DI
Base Product Number: DMN63
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V

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