DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single DMN63D8L-13

Description
Win Source Part Number: 1055777-DMN63D8L-13 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 10,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): 3LN01C-TB-H; DMN61D9U-7; DMN62D0U-7; DMN62D0U-13; NX138BKR; BSS138NH6433XTMA1; MMBF170LT3DMN63D8L13 ; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Diodes Incorporated Other Names: DMN63D8L-13DI Base Product Number: DMN63 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
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Description
Win Source Part Number: 1055777-DMN63D8L-13 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 10,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): 3LN01C-TB-H; DMN61D9U-7; DMN62D0U-7; DMN62D0U-13; NX138BKR; BSS138NH6433XTMA1; MMBF170LT3DMN63D8L13 ; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Diodes Incorporated Other Names: DMN63D8L-13DI Base Product Number: DMN63 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1055777-DMN63D8L-13 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1055777-DMN63D8L-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1055777-DMN63D8L-13
Win Source Part Number: 1055777-DMN63D8L-13 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 10,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): 3LN01C-TB-H; DMN61D9U-7; DMN62D0U-7; DMN62D0U-13; NX138BKR; BSS138NH6433XTMA1; MMBF170LT3DMN63D8L13 ; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Diodes Incorporated Other Names: DMN63D8L-13DI Base Product Number: DMN63 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V

Win Source Part Number: 1055777-DMN63D8L-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 10,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): 3LN01C-TB-H; DMN61D9U-7; DMN62D0U-7; DMN62D0U-13; NX138BKR; BSS138NH6433XTMA1; MMBF170LT3DMN63D8L13;
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: DMN63D8L-13DI
Base Product Number: DMN63
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - DMN63D8L-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN63D8L-13
Single FETs, MOSFETs DMN63D8L-13
MOSFET N-CH 30V 350MA SOT23-3

MOSFET N-CH 30V 350MA SOT23-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 31-DMN63D8L-13CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMN63D8L-13CT-ND
Single FETs, MOSFETs 31-DMN63D8L-13CT-ND
MOSFET N-CH 30V 350MA SOT23-3

MOSFET N-CH 30V 350MA SOT23-3

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMN63D8L-13DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMN63D8L-13DKR-ND
Single FETs, MOSFETs 31-DMN63D8L-13DKR-ND
MOSFET N-CH 30V 350MA SOT23-3

MOSFET N-CH 30V 350MA SOT23-3

Buy Now Datasheet
Single FETs, MOSFETs - 31-DMN63D8L-13TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMN63D8L-13TR-ND
Single FETs, MOSFETs 31-DMN63D8L-13TR-ND
N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Singapore
30V 350MA SOT23 MOSFET Transistor
278-DMN63D8L-13
30V 350MA SOT23 MOSFET Transistor 278-DMN63D8L-13
MOSFET N-CH 30V 350MA SOT23-3 Product overview: DMN63D8L-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 350MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 350MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN63D8L-13 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 350MA SOT23-3 Product overview: DMN63D8L-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 350MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 350MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN63D8L-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW

MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN63D8L-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN63D8L-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN63D8L-13
MOSFET N-CH 30V 350MA SOT23-3

MOSFET N-CH 30V 350MA SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1055777-DMN63D8L-13 DMN63D8L-13 31-DMN63D8L-13CT-ND 278-DMN63D8L-13 DMN63D8L-13 DMN63D8L-13
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs 30V 350MA SOT23 MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
PD 350 milliwatts 350 milliwatts 350 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3
Transistor Technology / Material MOSFET (Metal Oxide)
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