DIODES Incorporated Single FETs, MOSFETs DMN62D4LFB-7B

MOSFET BVDSS: 41V~60V X2-DFN1006

MOSFET BVDSS: 41V~60V X2-DFN1006

MOSFET BVDSS: 41V~60V X2-DFN1006

MOSFET BVDSS: 41V~60V X2-DFN1006

MOSFET BVDSS: 41V~60V X2-DFN1006 Product overview: DMN62D4LFB-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 41V, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 41V, 60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN62D4LFB-7B can be used for catalog matching and distributor lookup.

Win Source Part Number: 1055776-DMN62D4LFB-7B
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 10,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 407mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW
Package / Case: 3-UFDFN
Supplier Device Package: X1-DFN1006-3
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMN62D4LFB-7BDMN62D4LFB7B;
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Other Names: 31-DMN62D4LFB-7BTR
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V