MOSFET BVDSS: 41V~60V X2-DFN1006
Win Source Part Number: 1055776-DMN62D4LFB-7
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 10,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 407mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW
Package / Case: 3-UFDFN
Supplier Device Package: X1-DFN1006-3
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMN62D4LFB-7BDMN62D4
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Other Names: 31-DMN62D4LFB-7BTR
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
MOSFET BVDSS: 41V~60V X2-DFN1006
MOSFET BVDSS: 41V~60V X2-DFN1006
MOSFET BVDSS: 41V~60V X2-DFN1006
MOSFET BVDSS: 41V~60V X2-DFN1006
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | DMN62D4LFB-7B | 1055776-DMN62D4LFB-7B | 31-DMN62D4LFB-7BTR-ND | DMN62D4LFB-7B |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 407 milliamps |