The DMN62D2UVQ-13 is a dual N-channel enhancement mode MOSFET in a SOT563 package, designed for automotive applications requiring AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing. It has a 60V drain-source breakdown voltage, with on-resistance values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. The device supports continuous drain currents up to 450mA and features low input capacitance, fast switching, and ESD protection. It is RoHS compliant, halogen and antimony free, and has a thermal resistance of 156°C/W when mounted on a 1-inch square copper plate. The package is molded plastic with UL 94 V-0 flammability rating and moisture sensitivity level 1 per J-STD-020.
MOSFET 2N-CH 60V 0.45A SOT563
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMN62D2UVQ-13TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | SOT-563, SOT-666 |
