Dual N-channel enhancement mode MOSFET in SOT363 package for automotive applications, qualified to AEC-Q101 and manufactured in IATF 16949 certified facilities. The device has a 60 V drain-source voltage rating, continuous drain current of 340 mA at TA = 25°C, and a maximum on-resistance of 2.0 Ω at VGS = 5.0 V. It features low gate threshold voltage, fast switching speed, and ESD protection. The package is molded plastic with UL 94V-0 flammability rating, moisture sensitivity level 1 per J-STD-020, and a matte tin finish on alloy 42 leadframe. Total power dissipation is 0.3 W with a thermal resistance of 390 °C/W on minimum pad layout. Operating and storage temperature range is -55 °C to +150 °C.
MOSFET 2N-CH 60V 0.34A SOT363
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMN62D2UDWQ-13TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 6-TSSOP, SC-88, SOT-363 |
