DIODES Incorporated FET, MOSFET Arrays DMN62D2UDW-13

Dual N-channel enhancement mode MOSFET in an SOT363 package, designed for high-efficiency power-management applications such as motor control and power conversion. The device features a 60 V drain-source voltage rating, with on-resistance of 2.5 Ω at VGS = 2.5 V and 4.0 Ω at VGS = 1.8 V. It has a continuous drain current of 340 mA at TA = +25°C, and a total power dissipation of 0.3 W with minimum pad layout. The package is molded plastic with UL 94 V-0 flammability rating, is moisture sensitive level 1 per J-STD-020, and is fully RoHS compliant. The part is qualified to JEDEC standards for high reliability and is ESD protected.