Mosfet Array 2 N-Channel (Dual) 60V 350mA 320mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 60V 350mA 320mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 60V 350mA 320mW Surface Mount SOT-363
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033797-DMN62D0UDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 320mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 350mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.5nC @ 4.5V
Max Input Capacitance: 32pF @ 30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 100mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 60V 0.35A SOT363 Product overview: DMN62D0UDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.35A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN62D0UDW-7 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 60V 0.35A SOT363
MOSFET, DUAL N-CH, 60V, 0.35A, 0.32W; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:350mA; On Resistance Rds(on):1.2ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
MOSFET 2N-CH 60V 0.35A
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN62D0UDW-7DIDKR-ND | 1033797-DMN62D0UDW-7 | 289-DMN62D0UDW-7 | DMN62D0UDW-7 | 39AH6600 | DMN62D0UDW-7 | DMN62D0UDW-7 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN62D0UDW-7 | 60V 0.35A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 60V, 0.35A, 0.32W; Transistor Polarity Diodes Inc. | MOSFET | FET, MOSFET Arrays |
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3; SOT-363 | Tape & Reel (TR) | TO-3 | 6-TSSOP, SC-88, SOT-363 | ||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 320 milliwatts | 410 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
