MOSFET N-CH 60V 540MA 3DFN Product overview: DMN62D0SFD-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 540MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 540MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN62D0SFD-7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 540MA 3DFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 098996-DMN62D0SFD-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 430mW (Ta)
Family Name: DMN62D0SFD
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X1-DFN1212-3
Dimension: 3-UDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 540mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 0.87nC @ 10V
Max Input Capacitance: 30.2pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): Si1330EDL-T1; Si1330EDL-E3; Si1330EDL-T1-E3; Si1330EDL-T1-GE3;
Introduction Date: September 16, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
N-Channel 60V 540mA (Ta) 430mW (Ta) Surface Mount X1-DFN1212-3
N-Channel 60V 540mA (Ta) 430mW (Ta) Surface Mount X1-DFN1212-3
N-Channel 60V 540mA (Ta) 430mW (Ta) Surface Mount X1-DFN1212-3
MOSFET, N-CH, 60V, 0.54A, X1-DFN1212 ROHS COMPLIANT: YES
MOSFET N-CH 60V 540MA 3DFN
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMN62D0SFD-7 | DMN62D0SFD-7 | 098996-DMN62D0SFD-7 | DMN62D0SFD-7DICT-ND | 28AK8635 | DMN62D0SFD-7 | DMN62D0SFD-7 |
| Product Name | 60V 540MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN62D0SFD-7 | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 0.54A, X1-Dfn1212 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 890 milliwatts | 430 milliwatts | 430 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
