DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN62D0LFB-7B DMN62D0LFB-7B

Manufacturer: Diodes Incorporated
Win Source Part Number: 102478-DMN62D0LFB-7B
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 470mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-X1DFN1006
Dimension: 3-UFDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 100mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.45nC @ 4.5V
Max Input Capacitance: 32pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 100mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 1

MOSFET N-CH 60V 100MA 3-DFN Product overview: DMN62D0LFB-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100MA, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100MA, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN62D0LFB-7B can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 100MA 3-DFN

MOSFET N-CH 60V 100MA 3DFN

MOSFET N-CH 60V 100MA 3DFN

N-Channel 60V 100mA (Ta) Surface Mount X1-DFN1006-3