MOSFET N-CH 60V 100MA 3DFN
MOSFET N-CH 60V 100MA 3DFN Product overview: DMN62D0LFB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN62D0LFB-7 can be used for catalog matching and distributor lookup.
N-Channel 60V 100mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3
N-Channel 60V 100mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3
N-Channel 60V 100mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033796-DMN62D0LFB-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 470mW (Ta)
Family Name: DMN62D0LFB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-X1DFN1006
Dimension: 3-UFDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 100mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.45nC @ 4.5V
Max Input Capacitance: 32pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 100mA, 4V
Alternative Parts (Cross-Reference): Si1330EDL-E3; Si1330EDL-T1-E3; Si1330EDL;
Introduction Date: July 29, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFET, N-CH, 60V, 0.32A, X1-DFN1006 ROHS COMPLIANT: YES
MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K
MOSFET N-CH 60V 100MA 3DFN
60V 100mA 2Ω@4V,100mA 470mW 1V@250uA N Channel X1-DFN1006-3 MOSFETs ROHS
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN62D0LFB-7 | 278-DMN62D0LFB-7 | DMN62D0LFB-7DICT-ND | 1033796-DMN62D0LFB-7 | 28AK8633 | DMN62D0LFB-7 | DMN62D0LFB-7 | DMN62D0LFB-7 |
| Product Name | Single FETs, MOSFETs | 60V 100MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN62D0LFB-7 | Mosfet, N-Ch, 60V, 0.32A, X1-Dfn1006 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 100 milliamps | |||||||
| PD | 470 milliwatts | 500 milliwatts | 470 milliwatts | 470 milliwatts |