DIODES Incorporated FETs - Single - DMN61D9UW-7 DMN61D9UW-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 803642-DMN61D9UW-7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: SC-70, SOT-323 Power Dissipation (Maximum): 320mW Popularity: Medium Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 2Ohm at 50mA, 5V Gate Charge (Qg) (Maximum) at Vgs: 0.4nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 28.5pF at 30V Current - Continuous Drain (Id) at 25°C: 340mA Vgs(th) (Maximum) at Id: 1V at 250μA Maximum Vgs: ±20V
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 803642-DMN61D9UW-7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: SC-70, SOT-323 Power Dissipation (Maximum): 320mW Popularity: Medium Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 2Ohm at 50mA, 5V Gate Charge (Qg) (Maximum) at Vgs: 0.4nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 28.5pF at 30V Current - Continuous Drain (Id) at 25°C: 340mA Vgs(th) (Maximum) at Id: 1V at 250μA Maximum Vgs: ±20V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - DMN61D9UW-7 - 803642-DMN61D9UW-7 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - DMN61D9UW-7
803642-DMN61D9UW-7
FETs - Single - DMN61D9UW-7 803642-DMN61D9UW-7
Manufacturer: Diodes Incorporated Win Source Part Number: 803642-DMN61D9UW-7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: SC-70, SOT-323 Power Dissipation (Maximum): 320mW Popularity: Medium Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 2Ohm at 50mA, 5V Gate Charge (Qg) (Maximum) at Vgs: 0.4nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 28.5pF at 30V Current - Continuous Drain (Id) at 25°C: 340mA Vgs(th) (Maximum) at Id: 1V at 250μA Maximum Vgs: ±20V

Manufacturer: Diodes Incorporated
Win Source Part Number: 803642-DMN61D9UW-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: SC-70, SOT-323
Power Dissipation (Maximum): 320mW
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2Ohm at 50mA, 5V
Gate Charge (Qg) (Maximum) at Vgs: 0.4nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 28.5pF at 30V
Current - Continuous Drain (Id) at 25°C: 340mA
Vgs(th) (Maximum) at Id: 1V at 250μA
Maximum Vgs: ±20V

Buy Now
Singapore
60V 340MA MOSFET Transistor
278-DMN61D9UW-7
60V 340MA MOSFET Transistor 278-DMN61D9UW-7
MOSFET N-CH 60V 340MA SOT323 Product overview: DMN61D9UW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 340MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 340MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN61D9UW-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 340MA SOT323 Product overview: DMN61D9UW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 340MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 340MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN61D9UW-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN61D9UW-7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN61D9UW-7
Single FETs, MOSFETs DMN61D9UW-7
MOSFET N-CH 60V 340MA SOT323

MOSFET N-CH 60V 340MA SOT323

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A

MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN61D9UW-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN61D9UW-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN61D9UW-7
MOSFET N-CH 60V 340MA SOT323

MOSFET N-CH 60V 340MA SOT323

Supplier's Site
MOSFET N-CH 60V 0.34A - 233-DMN61D9UW-7 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 0.34A
233-DMN61D9UW-7
MOSFET N-CH 60V 0.34A 233-DMN61D9UW-7
MOSFET N-CH 60V 0.34A

MOSFET N-CH 60V 0.34A

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 803642-DMN61D9UW-7 278-DMN61D9UW-7 DMN61D9UW-7 DMN61D9UW-7 DMN61D9UW-7 233-DMN61D9UW-7
Product Name FETs - Single - DMN61D9UW-7 60V 340MA MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 60V 0.34A
Polarity N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement Enhancement
PD 320 milliwatts 440 milliwatts 320 milliwatts 320 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT323 Tape & Reel (TR) SOT323; SC-70, SOT-323 SOT323; SC-70, SOT-323
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