Manufacturer: Diodes Incorporated
Win Source Part Number: 1033794-DMN61D9UDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 320mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 350mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.4nC @ 4.5V
Max Input Capacitance: 28.5pF @ 30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 50mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 60V 0.35A
MOSFET 2N-CH 60V 0.35A SOT363 Product overview: DMN61D9UDW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.35A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN61D9UDW-7 can be used for catalog matching and distributor lookup.
MOSFET, DUAL N-CH, 60V, 0.35A, 0.32W; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:350mA; On Resistance Rds(on):1.2ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V RoHS Compliant: Yes
MOSFET 2N-CH 60V 0.35A SOT363
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1033794-DMN61D9UDW-7 | DMN61D9UDW-7 | 289-DMN61D9UDW-7 | 39AH6599 | DMN61D9UDW-7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN61D9UDW-7 | FET, MOSFET Arrays | 60V 0.35A MOSFET Transistor | Mosfet, Dual N-Ch, 60V, 0.35A, 0.32W; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | |||
| PD | 320 milliwatts | 410 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; SOT-363 | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | TO-3 |
