DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN61D9U-7 DMN61D9U-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033795-DMN61D9U-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 380mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.4nC @ 4.5V Max Input Capacitance: 28.5pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 Ohm @ 50mA, 5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN61D9U-7 - 1033795-DMN61D9U-7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMN61D9U-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN61D9U-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 60V 0.38A - 233-DMN61D9U-7 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, Aec-Q101, N-Ch, 0.38A, 60V, Sot23; Channel Type Diodes Inc. - 39AH6598 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033795-DMN61D9U-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 380mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.4nC @ 4.5V Max Input Capacitance: 28.5pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 Ohm @ 50mA, 5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN61D9U-7 - 1033795-DMN61D9U-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN61D9U-7
1033795-DMN61D9U-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN61D9U-7 1033795-DMN61D9U-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033795-DMN61D9U-7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 380mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.4nC @ 4.5V Max Input Capacitance: 28.5pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 Ohm @ 50mA, 5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033795-DMN61D9U-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 380mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.4nC @ 4.5V
Max Input Capacitance: 28.5pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 50mA, 5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60V 380MA SOT23 MOSFET Transistor
278-DMN61D9U-7
60V 380MA SOT23 MOSFET Transistor 278-DMN61D9U-7
MOSFET N-CH 60V 380MA SOT23 Product overview: DMN61D9U-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 380MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 380MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN61D9U-7 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 380MA SOT23 Product overview: DMN61D9U-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 380MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 380MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN61D9U-7 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - DMN61D9U-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN61D9U-7
Single FETs, MOSFETs DMN61D9U-7
MOSFET N-CH 60V 380MA SOT23

MOSFET N-CH 60V 380MA SOT23

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN61D9U-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN61D9U-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN61D9U-7
MOSFET N-CH 60V 380MA SOT23

MOSFET N-CH 60V 380MA SOT23

Supplier's Site
MOSFET N-CH 60V 0.38A - 233-DMN61D9U-7 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 0.38A
233-DMN61D9U-7
MOSFET N-CH 60V 0.38A 233-DMN61D9U-7
MOSFET N-CH 60V 0.38A

MOSFET N-CH 60V 0.38A

Supplier's Site
Mosfet, Aec-Q101, N-Ch, 0.38A, 60V, Sot23; Channel Type Diodes Inc. - 39AH6598 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 0.38A, 60V, Sot23; Channel Type Diodes Inc.
39AH6598
Mosfet, Aec-Q101, N-Ch, 0.38A, 60V, Sot23; Channel Type Diodes Inc. 39AH6598
MOSFET, AEC-Q101, N-CH, 0.38A, 60V, SOT23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:380mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 0.38A, 60V, SOT23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:380mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033795-DMN61D9U-7 278-DMN61D9U-7 DMN61D9U-7 DMN61D9U-7 233-DMN61D9U-7 39AH6598
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN61D9U-7 60V 380MA SOT23 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 60V 0.38A Mosfet, Aec-Q101, N-Ch, 0.38A, 60V, Sot23; Channel Type Diodes Inc.
Polarity N-Channel; N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 370 milliwatts 370 milliwatts 370 milliwatts 370 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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