MOSFET N-CH 60V 5.6A POWERDI333 Product overview: DMN6069SFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN6069SFG-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 801134-DMN6069SFG-7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 930mW
Popularity: High
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 50mOhm at 4.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1480pF at 30V
Current - Continuous Drain (Id) at 25°C: 5.6A , 18A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V
MOSFET N-CH 60V 5.6A POWERDI333
N-Channel 60V 5.6A (Ta), 18A (Tc) 930mW (Ta) Surface Mount PowerDI3333-8
N-Channel 60V 5.6A (Ta), 18A (Tc) 930mW (Ta) Surface Mount PowerDI3333-8
N-Channel 60V 5.6A (Ta), 18A (Tc) 930mW (Ta) Surface Mount PowerDI3333-8
MOSFET N-CH 60V 5.6A POWERDI333
60V 930mW 50mΩ@4.5A,10V 3V@250uA null PowerDI-3333-8 MOSFETs ROHS
MOSFET, N-CH, 60V, 18A, POWERDI 3333 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMN6069SFG-7 | 801134-DMN6069SFG-7 | DMN6069SFG-7 | DMN6069SFG-7DITR-ND | DMN6069SFG-7 | DMN6069SFG-7 | 28AK8622 |
| Product Name | 60V 5.6A MOSFET Transistor | FETs - Single - DMN6069SFG-7 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 60V, 18A, Powerdi 3333 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 930 milliwatts | 930 milliwatts | 930 milliwatts | 930 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
