DIODES Incorporated Single FETs, MOSFETs DMN6068SEQ-13

MOSFET BVDSS: 41V~60V SOT223 T&R

MOSFET BVDSS: 41V~60V SOT223 T&R

MOSFET BVDSS: 41V~60V SOT223 T&R

MOSFET BVDSS: 41V~60V SOT223 T&R

MOSFET BVDSS: 41V~60V SOT223 T&R Product overview: DMN6068SEQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 41V, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 41V, 60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN6068SEQ-13 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1055775-DMN6068SEQ-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 4,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMN6068SEQ-13DMN6068SEQ13;
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Other Names: 31-DMN6068SEQ-13TR
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V