Suppliers

Company

Product

Description

Supplier Links

ODG (Origin Data Global)

Shenzhen, China

Transistors
DMN6068SE

Transistors DMN6068SE

60V 68mΩ SOT-223 MOSFETs ROHS

Supplier's Site

Newark, An Avnet Company

Chicago, IL, United States

Mosfet, N Channel, Diode, 60V, 4.1A, Sot223; Channel Type Diodes Inc.
65T8226

Mosfet, N Channel, Diode, 60V, 4.1A, Sot223; Channel Type Diodes Inc. 65T8226

MOSFET, N CHANNEL, DIODE, 60V, 4.1A, SOT223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site

Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4 - 233-DMN6068SE - Utmel Electronic Limited

Utmel Electronic Limited

Hong Kong, China

Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4
233-DMN6068SE

Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4 233-DMN6068SE

Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4

Supplier's Site

Technical Specifications

	ODG (Origin Data Global)	Newark, An Avnet Company	Utmel Electronic Limited
Product Category	Transistors	Metal-Oxide Semiconductor FET (MOSFET)	Transistors
Product Number	DMN6068SE	65T8226	233-DMN6068SE
Product Name	Transistors	Mosfet, N Channel, Diode, 60V, 4.1A, Sot223; Channel Type Diodes Inc.	Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4
Polarity		N-Channel	N-Channel