Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4
MOSFET, N CHANNEL, DIODE, 60V, 4.1A, SOT223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| ODG (Origin Data Global) | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN6068SE | 233-DMN6068SE | 65T8226 |
| Product Name | Transistors | Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4 | Mosfet, N Channel, Diode, 60V, 4.1A, Sot223; Channel Type Diodes Inc. |
| Polarity | N-Channel | N-Channel |