DIODES Incorporated Transistors DMN6068SE

Description
60V 68mΩ SOT-223 MOSFETs ROHS
  • Transistors - DMN6068SE - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4 - 233-DMN6068SE - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, N Channel, Diode, 60V, 4.1A, Sot223; Channel Type Diodes Inc. - 65T8226 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
60V 68mΩ SOT-223 MOSFETs ROHS
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Suppliers

Company
Product
Description
Supplier Links
Transistors - DMN6068SE - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
DMN6068SE
Transistors DMN6068SE
60V 68mΩ SOT-223 MOSFETs ROHS

60V 68mΩ SOT-223 MOSFETs ROHS

Supplier's Site
Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4 - 233-DMN6068SE - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4
233-DMN6068SE
Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4 233-DMN6068SE
Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4

Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4

Supplier's Site
Mosfet, N Channel, Diode, 60V, 4.1A, Sot223; Channel Type Diodes Inc. - 65T8226 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, Diode, 60V, 4.1A, Sot223; Channel Type Diodes Inc.
65T8226
Mosfet, N Channel, Diode, 60V, 4.1A, Sot223; Channel Type Diodes Inc. 65T8226
MOSFET, N CHANNEL, DIODE, 60V, 4.1A, SOT223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, N CHANNEL, DIODE, 60V, 4.1A, SOT223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Utmel Electronic Limited Newark, An Avnet Company
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMN6068SE 233-DMN6068SE 65T8226
Product Name Transistors Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4 Mosfet, N Channel, Diode, 60V, 4.1A, Sot223; Channel Type Diodes Inc.
Polarity N-Channel N-Channel
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