MOSFET 2N-CH 60V 3.3A 8SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 014459-DMN6066SSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10.3nC @ 10V
Max Input Capacitance: 502pF @ 30V
Maximum Rds On at Id,Vgs: 66 mOhm @ 4.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 60V 3.3A 1.8W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 60V 3.3A 1.8W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 60V 3.3A 1.8W Surface Mount 8-SO
MOSFET, DUAL, N-CH, 60V, 3.3A ROHS COMPLIANT: YES
MOSFET 2N-CH 60V 3.3A 8SO
MOSFET 2N-CH 60V 3.3A 8SO
MOSFET MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN6066SSD-13 | 014459-DMN6066SSD-13 | DMN6066SSD-13DKR-ND | 28AK8618 | 233-DMN6066SSD-13 | DMN6066SSD-13 | DMN6066SSD-13 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN6066SSD-13 | FET, MOSFET Arrays | Mosfet, Dual, N-Ch, 60V, 3.3A Rohs Compliant Diodes Inc. | MOSFET 2N-CH 60V 3.3A 8SO | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 3300 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
