MOSFET N-CH 60V 5.3A 6UDFN Product overview: DMN6040SFDE-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN6040SFDE-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 107856-DMN6040SFDE-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 660mW (Ta)
Family Name: DMN6040SFDE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 22.4nC @ 10V
Max Input Capacitance: 1287pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38 mOhm @ 4.3A, 10V
Alternative Parts (Cross-Reference): PMPB55ENEA; PMPB55ENEAX; STL7N6F7;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
N-Channel 60V 5.3A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
N-Channel 60V 5.3A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
N-Channel 60V 5.3A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
MOSFET N-CH 60V 5.3A 6UDFN
MOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K
MOSFET, N-CH, 60V, 5.3A, U-DFN2020 ROHS COMPLIANT: YES
MOSFET N-CH 60V 5.3A 6UDFN
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMN6040SFDE-7 | 107856-DMN6040SFDE-7 | DMN6040SFDE-7DITR-ND | DMN6040SFDE-7 | DMN6040SFDE-7 | 36AJ3590 | DMN6040SFDE-7 |
| Product Name | 60V 5.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN6040SFDE-7 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 5.3A, U-Dfn2020 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 660 milliwatts | 660 milliwatts | 660 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
