DIODES Incorporated FET, MOSFET Arrays DMN5L06DWK-7

Description
Mosfet Array 2 N-Channel (Dual) 50V 305mA 250mW Surface Mount SOT-363
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 50V 305mA 250mW Surface Mount SOT-363
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - DMN5L06DWKDITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN5L06DWKDITR-ND
FET, MOSFET Arrays DMN5L06DWKDITR-ND
Mosfet Array 2 N-Channel (Dual) 50V 305mA 250mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 50V 305mA 250mW Surface Mount SOT-363

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN5L06DWK-7 - 014449-DMN5L06DWK-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN5L06DWK-7
014449-DMN5L06DWK-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN5L06DWK-7 014449-DMN5L06DWK-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014449-DMN5L06DWK-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: DMN5L06DWK Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 305mA Gate-Source Threshold Voltage: 1V @ 250μA Max Input Capacitance: 50pF @ 25V Maximum Rds On at Id,Vgs: 2 Ohm @ 50mA, 5V Alternative Parts (Cross-Reference): UM6K33N; UM6K33NTN; UM6K34NTCN; Introduction Date: July 19, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Diodes Incorporated
Win Source Part Number: 014449-DMN5L06DWK-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN5L06DWK
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 305mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Input Capacitance: 50pF @ 25V
Maximum Rds On at Id,Vgs: 2 Ohm @ 50mA, 5V
Alternative Parts (Cross-Reference): UM6K33N; UM6K33NTN; UM6K34NTCN;
Introduction Date: July 19, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
FET, MOSFET Arrays - DMN5L06DWK-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN5L06DWK-7
FET, MOSFET Arrays DMN5L06DWK-7
MOSFET 2N-CH 50V 0.305A SOT-363

MOSFET 2N-CH 50V 0.305A SOT-363

Supplier's Site Datasheet
Mosfet, N Channel, Dual, 50V, 800Ma, Sot-363; Transistor Polarity Diodes Inc. - 25R4526 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, Dual, 50V, 800Ma, Sot-363; Transistor Polarity Diodes Inc.
25R4526
Mosfet, N Channel, Dual, 50V, 800Ma, Sot-363; Transistor Polarity Diodes Inc. 25R4526
MOSFET, N CHANNEL, DUAL, 50V, 800mA, SOT-363; Transistor Polarity:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:800mA; On Resistance Rds(on):2ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V RoHS Compliant: Yes

MOSFET, N CHANNEL, DUAL, 50V, 800mA, SOT-363; Transistor Polarity:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:800mA; On Resistance Rds(on):2ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V RoHS Compliant: Yes

Supplier's Site
MOSFET 2N-CH 50V 0.305A SOT-363 - 233-DMN5L06DWK-7 - Utmel Electronic Limited
Hong Kong, China
MOSFET 2N-CH 50V 0.305A SOT-363
233-DMN5L06DWK-7
MOSFET 2N-CH 50V 0.305A SOT-363 233-DMN5L06DWK-7
MOSFET 2N-CH 50V 0.305A SOT-363

MOSFET 2N-CH 50V 0.305A SOT-363

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Dual N-Channel

MOSFET Dual N-Channel

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN5L06DWK-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN5L06DWK-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN5L06DWK-7
MOSFET 2N-CH 50V 0.305A SOT363

MOSFET 2N-CH 50V 0.305A SOT363

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number DMN5L06DWKDITR-ND 014449-DMN5L06DWK-7 DMN5L06DWK-7 25R4526 233-DMN5L06DWK-7 DMN5L06DWK-7 DMN5L06DWK-7
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN5L06DWK-7 FET, MOSFET Arrays Mosfet, N Channel, Dual, 50V, 800Ma, Sot-363; Transistor Polarity Diodes Inc. MOSFET 2N-CH 50V 0.305A SOT-363 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; SOT-363 6-TSSOP, SC-88, SOT-363 TO-3; SOT3
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
V(BR)DSS 50 volts 50 volts 50 volts
PD 250 milliwatts 250 milliwatts
TJ -65 to 150 C (-85 to 302 F) -65 to 150 C (-85 to 302 F) -65 to 150 C (-85 to 302 F)
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