MOSFET N-CH 50V 360MA SOT323
MOSFET N-CH 50V 360MA SOT323 Product overview: DMN53D0LW-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 360MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 360MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN53D0LW-7 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033777-DMN53D0LW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 320mW (Ta)
Family Name: DMN53D0LW
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-323
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 360mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Gate Charge: 1.2nC @ 10V
Max Input Capacitance: 45.8pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 270mA, 10V
Alternative Parts (Cross-Reference): DMN53D0LW; RYU002N05T306; RUU002N05;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
N-Channel 50V 360mA (Ta) 320mW (Ta) Surface Mount SOT-323
N-Channel 50V 360mA (Ta) 320mW (Ta) Surface Mount SOT-323
N-Channel 50V 360mA (Ta) 320mW (Ta) Surface Mount SOT-323
MOSFET N-CH 50V 360MA SOT323
MOSFET, N-CH, 50V, 0.36A, SOT-323 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN53D0LW-7 | 278-DMN53D0LW-7 | 1033777-DMN53D0LW-7 | DMN53D0LW-7DITR-ND | DMN53D0LW-7 | 28AK8599 |
| Product Name | Single FETs, MOSFETs | 50V 360MA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN53D0LW-7 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 50V, 0.36A, Sot-323 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 50 volts | 50 volts | 50 volts | |||
| IDSS | 360 milliamps | |||||
| PD | 320 milliwatts | 420 milliwatts | 320 milliwatts |