MOSFET 2N-CH 50V 0.36A SOT363
Mosfet Array 2 N-Channel (Dual) 50V 360mA 310mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 50V 360mA 310mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 50V 360mA 310mW Surface Mount SOT-363
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033776-DMN53D0LDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 310mW
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 360mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 46pF @ 25V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
50V 360mA 1.6Ω@10V,500mA 310mW 1.5V@250uA 2 N-Channel SOT-363 MOSFETs ROHS
MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
MOSFET, DUAL N-CH, 0.36A, 50V, 150DEG C ROHS COMPLIANT: YES
MOSFET 2N-CH 50V 0.36A SOT363
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN53D0LDW-7 | DMN53D0LDW-7DICT-ND | 1033776-DMN53D0LDW-7 | DMN53D0LDW-7 | DMN53D0LDW-7 | 68AH9548 | DMN53D0LDW-7 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN53D0LDW-7 | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Mosfet, Dual N-Ch, 0.36A, 50V, 150Deg C Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 50 volts | 50 volts | 50 volts | ||||
| IDSS | 360 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
