DIODES Incorporated FET, MOSFET Arrays DMN52D0UVQ-7

The DMN52D0UVQ is a dual N-channel enhancement mode MOSFET in a SOT563 package, designed for automotive battery-management and load-switch applications. It has a 50 V drain-source voltage rating, a maximum continuous drain current of 480 mA at 25°C, and on-resistance values of 2.5 Ω at 2.5 V gate-source voltage and 2.0 Ω at 5 V gate-source voltage. The device features a low gate threshold voltage of 1.0 V max, low input capacitance, fast switching speeds, and ESD protection. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. The package is molded plastic with a 94V-0 flammability rating, moisture sensitivity level 1, and weighs approximately 0.006 grams. Thermal resistance junction-to-ambient is 139 °C/W with optimal PCB layout. The part is RoHS compliant and halogen- and antimony-free.