DIODES Incorporated 40V 4.8A MOSFET Transistor DMN4034SSD-13

MOSFET 2N-CH 40V 4.8A 8SO Product overview: DMN4034SSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 4.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 4.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN4034SSD-13 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 40V 4.8A 8SO

Mosfet Array 2 N-Channel (Dual) 40V 4.8A 1.8W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 40V 4.8A 1.8W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 40V 4.8A 1.8W Surface Mount 8-SO

Manufacturer: Diodes Incorporated
Win Source Part Number: 014443-DMN4034SSD-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: DMN4034SSD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 4.8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 453pF @ 20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): NVMD6N04R2G; NTMD6N04R2G; TPC8227-H;
Introduction Date: March 03, 2010
ECCN: EAR99
Country of Origin: China, China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited