DIODES Incorporated FET, MOSFET Arrays DMN4031SSDQ-13

Description
Mosfet Array 2 N-Channel (Dual) 40V 5.2A 1.42W Surface Mount 8-SO
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 40V 5.2A 1.42W Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 31-DMN4031SSDQ-13CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN4031SSDQ-13CT-ND
FET, MOSFET Arrays 31-DMN4031SSDQ-13CT-ND
Mosfet Array 2 N-Channel (Dual) 40V 5.2A 1.42W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 40V 5.2A 1.42W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN4031SSDQ-13TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN4031SSDQ-13TR-ND
FET, MOSFET Arrays 31-DMN4031SSDQ-13TR-ND
Mosfet Array 2 N-Channel (Dual) 40V 5.2A 1.42W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 40V 5.2A 1.42W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - 31-DMN4031SSDQ-13DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMN4031SSDQ-13DKR-ND
FET, MOSFET Arrays 31-DMN4031SSDQ-13DKR-ND
Mosfet Array 2 N-Channel (Dual) 40V 5.2A 1.42W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 40V 5.2A 1.42W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - DMN4031SSDQ-13 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN4031SSDQ-13
FET, MOSFET Arrays DMN4031SSDQ-13
MOSFET 2N-CH 40V 5.2A 8SOIC

MOSFET 2N-CH 40V 5.2A 8SOIC

Supplier's Site Datasheet
Singapore
40V 5.2A MOSFET Transistor
289-DMN4031SSDQ-13
40V 5.2A MOSFET Transistor 289-DMN4031SSDQ-13
MOSFET 2N-CH 40V 5.2A 8SO Product overview: DMN4031SSDQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 5.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN4031SSDQ-13 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 40V 5.2A 8SO Product overview: DMN4031SSDQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 5.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN4031SSDQ-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN4031SSDQ-13 - 1033774-DMN4031SSDQ-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN4031SSDQ-13
1033774-DMN4031SSDQ-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN4031SSDQ-13 1033774-DMN4031SSDQ-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033774-DMN4031SSDQ- 13 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.42W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 5.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 18.6nC @ 10V Max Input Capacitance: 945pF @ 20V Maximum Rds On at Id,Vgs: 31 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033774-DMN4031SSDQ-13
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.42W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 5.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18.6nC @ 10V
Max Input Capacitance: 945pF @ 20V
Maximum Rds On at Id,Vgs: 31 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET Dual N-Ch Enh FET 40V 20Vgss 20A

MOSFET Dual N-Ch Enh FET 40V 20Vgss 20A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN4031SSDQ-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN4031SSDQ-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN4031SSDQ-13
MOSFET 2N-CH 40V 5.2A 8SO

MOSFET 2N-CH 40V 5.2A 8SO

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 31-DMN4031SSDQ-13CT-ND DMN4031SSDQ-13 289-DMN4031SSDQ-13 1033774-DMN4031SSDQ-13 DMN4031SSDQ-13 DMN4031SSDQ-13
Product Name FET, MOSFET Arrays FET, MOSFET Arrays 40V 5.2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN4031SSDQ-13 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) SOT3; 8-SO
Polarity N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts 40 volts
IDSS 5200 milliamps
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