DIODES Incorporated 31V 40V MOSFET Transistor DMN4020LFDEQ-7

MOSFET BVDSS: 31V~40V U-DFN2020- Product overview: DMN4020LFDEQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 31V, 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 31V, 40V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN4020LFDEQ-7 can be used for catalog matching and distributor lookup.

MOSFET BVDSS: 31V~40V U-DFN2020-

Win Source Part Number: 1376888-DMN4020LFDEQ-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 59 pct.
REACH Status: REACH Unaffected
Mfr: Diodes Incorporated
Series: Automotive, AEC-Q101
Product Status: Active
Package / Case: 6-PowerUDFN
Supplier Device Package: U-DFN2020-6 (Type E)
Base Product Number: DMN4020
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 20 V
Power Dissipation (Max): 850mW (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
ECCN: EAR99

MOSFET BVDSS: 31V~40V U-DFN2020-