DIODES Incorporated Single FETs, MOSFETs DMN3900UFA-7B

N-Channel 30V 550mA (Ta) 390mW (Ta) Surface Mount X2-DFN0806-3

N-Channel 30V 550mA (Ta) 390mW (Ta) Surface Mount X2-DFN0806-3

N-Channel 30V 550mA (Ta) 390mW (Ta) Surface Mount X2-DFN0806-3

MOSFET N-CH 30V 550MA 3DFN Product overview: DMN3900UFA-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 550MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 550MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3900UFA-7B can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033768-DMN3900UFA-7B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 390mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN0806-3
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 550mA (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 0.7nC @ 4.5V
Max Input Capacitance: 42.2pF @ 25V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 760 mOhm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient