DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3730UFB-7 DMN3730UFB-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 096868-DMN3730UFB-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 470mW (Ta)
Family Name: DMN3730UFB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-DFN
Dimension: 3-UFDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 750mA (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 1.6nC @ 4.5V
Max Input Capacitance: 64.3pF @ 25V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 460 mOhm @ 200mA, 4.5V
Introduction Date: October 22, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

N-Channel 30V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3

N-Channel 30V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3

N-Channel 30V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3

MOSFET N-CH 30V 750MA 3DFN Product overview: DMN3730UFB-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 750MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 750MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN3730UFB-7 can be used for catalog matching and distributor lookup.