DIODES Incorporated FET, MOSFET Arrays DMN34D0UDWQ-7

The DMN34D0UDWQ-7 is a dual N-channel enhancement mode MOSFET in a SOT363 surface-mount package, designed for high-efficiency power-management applications in battery-operated systems and solid-state relays. It has a drain-source voltage rating of 25 V, a continuous drain current of 0.27 A at 25°C with VGS = 4.5 V, and a low on-resistance of 4 Ω at VGS = 4.5 V and 5 Ω at VGS = 2.7 V. The device features fast switching speed, low gate threshold voltage (0.65 V to 1.5 V), and is ESD protected. It is AEC-Q101 qualified, PPAP capable, manufactured in IATF 16949 certified facilities, and fully RoHS compliant. The part is moisture sensitive level 1 per J-STD-020, with a thermal resistance of 357 °C/W on a standard FR-4 PCB. The package material is molded plastic with UL 94 V-0 flammability rating. The -7 suffix indicates tape and reel packaging with 3000 units per reel.