DIODES Incorporated FET, MOSFET Arrays DMN3401LV-7

The DMN3401LV-7 is a dual N-channel enhancement mode MOSFET in an SOT563 package, designed for high-efficiency power management applications such as motor control and DC-DC conversion. It features a maximum drain-source voltage of 30 V, continuous drain current of 0.8 A at VGS = 4.5 V and TA = +25°C, and on-resistance of 0.7 Ω at VGS = 4.5 V. The device includes ESD-protected gates, is RoHS compliant, and meets AEC-Q100/101/104/200 qualifications for automotive use. It has a thermal resistance of 155 °C/W when mounted on an FR-4 substrate with 2 oz copper and a 1-inch square copper plate. The package is molded plastic with UL 94 V-0 flammability rating and moisture sensitivity level 1 per J-STD-020. The part is supplied in a 7-inch reel with 3,000 units per carrier.