DIODES Incorporated FET, MOSFET Arrays DMN33D9LV-7A

MOSFET 2N-CH 30V 0.35A SOT563

MOSFET 2N-CH 30V 0.35A SOT563

MOSFET 2N-CH 30V 0.35A SOT563

MOSFET 2N-CH 30V 0.35A SOT563 Product overview: DMN33D9LV-7A from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.35A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN33D9LV-7A can be used for catalog matching and distributor lookup.

Win Source Part Number: 991193-DMN33D9LV-7A
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.4V @ 100µA
Power - Max: 430mW (Ta)
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
HTSUS: 8541.21.0095
Mfr: Diodes Incorporated
Other Names: 31-DMN33D9LV-7ATR