MOSFET 2N-CH 30V 0.25A
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033766-DMN33D8LDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 350mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 250mA
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Gate Charge: 1.23nC @ 10V
Max Input Capacitance: 48pF @ 5V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363
MOSFET, DUAL N-CH, 30V, 0.25A, 0.35W; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:250mA; On Resistance Rds(on):2.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2N-CH 30V 0.25A SOT363
MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN33D8LDW-7 | 1033766-DMN33D8LDW-7 | DMN33D8LDW-7DITR-ND | 39AH6595 | DMN33D8LDW-7 | DMN33D8LDW-7 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7 | FET, MOSFET Arrays | Mosfet, Dual N-Ch, 30V, 0.25A, 0.35W; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 250 milliamps | 250 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
