DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7 DMN33D8LDW-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033766-DMN33D8LDW-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 350mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 250mA Gate-Source Threshold Voltage: 1.5V @ 100μA Max Gate Charge: 1.23nC @ 10V Max Input Capacitance: 48pF @ 5V Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7 - 1033766-DMN33D8LDW-7 - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - DMN33D8LDW-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FET, MOSFET Arrays - DMN33D8LDW-7DITR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - DMN33D8LDW-7DICT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - DMN33D8LDW-7DIDKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN33D8LDW-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, Dual N-Ch, 30V, 0.25A, 0.35W; Transistor Polarity Diodes Inc. - 39AH6595 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033766-DMN33D8LDW-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 350mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 250mA Gate-Source Threshold Voltage: 1.5V @ 100μA Max Gate Charge: 1.23nC @ 10V Max Input Capacitance: 48pF @ 5V Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7 - 1033766-DMN33D8LDW-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7
1033766-DMN33D8LDW-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7 1033766-DMN33D8LDW-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033766-DMN33D8LDW-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 350mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 250mA Gate-Source Threshold Voltage: 1.5V @ 100μA Max Gate Charge: 1.23nC @ 10V Max Input Capacitance: 48pF @ 5V Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033766-DMN33D8LDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 350mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 250mA
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Gate Charge: 1.23nC @ 10V
Max Input Capacitance: 48pF @ 5V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - DMN33D8LDW-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN33D8LDW-7
FET, MOSFET Arrays DMN33D8LDW-7
MOSFET 2N-CH 30V 0.25A

MOSFET 2N-CH 30V 0.25A

Supplier's Site Datasheet
FET, MOSFET Arrays - DMN33D8LDW-7DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN33D8LDW-7DITR-ND
FET, MOSFET Arrays DMN33D8LDW-7DITR-ND
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - DMN33D8LDW-7DICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN33D8LDW-7DICT-ND
FET, MOSFET Arrays DMN33D8LDW-7DICT-ND
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - DMN33D8LDW-7DIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN33D8LDW-7DIDKR-ND
FET, MOSFET Arrays DMN33D8LDW-7DIDKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN33D8LDW-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN33D8LDW-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN33D8LDW-7
MOSFET 2N-CH 30V 0.25A SOT363

MOSFET 2N-CH 30V 0.25A SOT363

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN33D8LDW-7
MOSFET DMN33D8LDW-7
MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W

MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W

Buy Now Datasheet
Mosfet, Dual N-Ch, 30V, 0.25A, 0.35W; Transistor Polarity Diodes Inc. - 39AH6595 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 30V, 0.25A, 0.35W; Transistor Polarity Diodes Inc.
39AH6595
Mosfet, Dual N-Ch, 30V, 0.25A, 0.35W; Transistor Polarity Diodes Inc. 39AH6595
MOSFET, DUAL N-CH, 30V, 0.25A, 0.35W; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:250mA; On Resistance Rds(on):2.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

MOSFET, DUAL N-CH, 30V, 0.25A, 0.35W; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:250mA; On Resistance Rds(on):2.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033766-DMN33D8LDW-7 DMN33D8LDW-7 DMN33D8LDW-7DITR-ND DMN33D8LDW-7 DMN33D8LDW-7 39AH6595
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7 FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, Dual N-Ch, 30V, 0.25A, 0.35W; Transistor Polarity Diodes Inc.
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 30 volts 30 volts
PD 350 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 TO-3
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