DIODES Incorporated FET, MOSFET Arrays DMN33D8LDW-7

Description
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - DMN33D8LDW-7DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN33D8LDW-7DITR-ND
FET, MOSFET Arrays DMN33D8LDW-7DITR-ND
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - DMN33D8LDW-7DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN33D8LDW-7DICT-ND
FET, MOSFET Arrays DMN33D8LDW-7DICT-ND
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - DMN33D8LDW-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN33D8LDW-7DIDKR-ND
FET, MOSFET Arrays DMN33D8LDW-7DIDKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Mosfet Array 2 N-Channel (Dual) 30V 250mA 350mW Surface Mount SOT-363

Buy Now Datasheet
FET, MOSFET Arrays - DMN33D8LDW-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN33D8LDW-7
FET, MOSFET Arrays DMN33D8LDW-7
MOSFET 2N-CH 30V 0.25A

MOSFET 2N-CH 30V 0.25A

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7 - 1033766-DMN33D8LDW-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7
1033766-DMN33D8LDW-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7 1033766-DMN33D8LDW-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033766-DMN33D8LDW-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Power Dissipation: 350mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 250mA Gate-Source Threshold Voltage: 1.5V @ 100μA Max Gate Charge: 1.23nC @ 10V Max Input Capacitance: 48pF @ 5V Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033766-DMN33D8LDW-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 350mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 250mA
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Gate Charge: 1.23nC @ 10V
Max Input Capacitance: 48pF @ 5V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN33D8LDW-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN33D8LDW-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN33D8LDW-7
MOSFET 2N-CH 30V 0.25A SOT363

MOSFET 2N-CH 30V 0.25A SOT363

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W

MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W

Buy Now Datasheet
Mosfet, Dual N-Ch, 30V, 0.25A, 0.35W; Transistor Polarity Diodes Inc. - 39AH6595 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 30V, 0.25A, 0.35W; Transistor Polarity Diodes Inc.
39AH6595
Mosfet, Dual N-Ch, 30V, 0.25A, 0.35W; Transistor Polarity Diodes Inc. 39AH6595
MOSFET, DUAL N-CH, 30V, 0.25A, 0.35W; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:250mA; On Resistance Rds(on):2.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

MOSFET, DUAL N-CH, 30V, 0.25A, 0.35W; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:250mA; On Resistance Rds(on):2.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number DMN33D8LDW-7DITR-ND DMN33D8LDW-7 1033766-DMN33D8LDW-7 DMN33D8LDW-7 DMN33D8LDW-7 39AH6595
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN33D8LDW-7 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, Dual N-Ch, 30V, 0.25A, 0.35W; Transistor Polarity Diodes Inc.
Package Type 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 SOT3; SOT-363 TO-3
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 250 milliamps 250 milliamps
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