Manufacturer: Diodes Incorporated
Win Source Part Number: 080578-DMN3300U-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: DMN3300U
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Input Capacitance: 193pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 150 mOhm @ 4.5A, 4.5V
Alternative Parts (Cross-Reference): SSM3K01F; SSM3K01F(T5LSONY); SSM3K01F(TE85,F);
Introduction Date: December 12, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 2A SOT23-3
N-Channel 30V 2A (Ta) 700mW (Ta) Surface Mount SOT-23-3
N-Channel 30V 2A (Ta) 700mW (Ta) Surface Mount SOT-23-3
N-Channel 30V 2A (Ta) 700mW (Ta) Surface Mount SOT-23-3
MOSFET N-CH 30V 2A SOT23-3
MOSFET, N-CH, 30V, 1.5A, SOT-23 ROHS COMPLIANT: YES
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 080578-DMN3300U-7 | DMN3300U-7 | DMN3300U-7DICT-ND | DMN3300U-7 | 28AK8574 | DMN3300U-7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN3300U-7 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 1.5A, Sot-23 Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 700 milliwatts | 700 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
