DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LV-7 DMN32D2LV-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033765-DMN32D2LV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 400mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 400mA Gate-Source Threshold Voltage: 1.2V @ 250μA Max Input Capacitance: 39pF @ 3V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 100mA, 4V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LV-7 - 1033765-DMN32D2LV-7 - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - DMN32D2LV-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN32D2LV-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563 - 233-DMN32D2LV-7 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033765-DMN32D2LV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 400mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 400mA Gate-Source Threshold Voltage: 1.2V @ 250μA Max Input Capacitance: 39pF @ 3V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 100mA, 4V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LV-7 - 1033765-DMN32D2LV-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LV-7
1033765-DMN32D2LV-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LV-7 1033765-DMN32D2LV-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033765-DMN32D2LV-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 400mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 400mA Gate-Source Threshold Voltage: 1.2V @ 250μA Max Input Capacitance: 39pF @ 3V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 100mA, 4V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033765-DMN32D2LV-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 400mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 400mA
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Input Capacitance: 39pF @ 3V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 100mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
30V 0.4A MOSFET Transistor
289-DMN32D2LV-7
30V 0.4A MOSFET Transistor 289-DMN32D2LV-7
MOSFET 2N-CH 30V 0.4A SOT563 Product overview: DMN32D2LV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN32D2LV-7 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 0.4A SOT563 Product overview: DMN32D2LV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN32D2LV-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - DMN32D2LV-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN32D2LV-7
FET, MOSFET Arrays DMN32D2LV-7
MOSFET 2N-CH 30V 0.4A SOT-563

MOSFET 2N-CH 30V 0.4A SOT-563

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN32D2LV-7
MOSFET DMN32D2LV-7
MOSFET Dual N-Channel

MOSFET Dual N-Channel

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN32D2LV-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN32D2LV-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN32D2LV-7
MOSFET 2N-CH 30V 0.4A SOT563

MOSFET 2N-CH 30V 0.4A SOT563

Supplier's Site
Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563 - 233-DMN32D2LV-7 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563
233-DMN32D2LV-7
Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563 233-DMN32D2LV-7
Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563

Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033765-DMN32D2LV-7 289-DMN32D2LV-7 DMN32D2LV-7 DMN32D2LV-7 DMN32D2LV-7 233-DMN32D2LV-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LV-7 30V 0.4A MOSFET Transistor FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
V(BR)DSS 30 volts 30 volts 30 volts 30 volts
PD 400 milliwatts 450 milliwatts 400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-563 Tape & Reel (TR) SOT-563, SOT-666
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