MOSFET N-CH 30V 300MA 3DFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 084240-DMN32D2LFB4-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 300mA (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Input Capacitance: 39pF @ 3V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 100mA, 4V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 300MA 3DFN Product overview: DMN32D2LFB4-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 300MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 300MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN32D2LFB4-7 can be used for catalog matching and distributor lookup.
N-Channel 30V 300mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3
N-Channel 30V 300mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3
N-Channel 30V 300mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3
MOSFET N-CH 30V 300MA 3DFN
MOSFET, N-CH, 30V, 0.3A, X2-DFN1006 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMN32D2LFB4-7 | 084240-DMN32D2LFB4-7 | 278-DMN32D2LFB4-7 | DMN32D2LFB4DICT-ND | DMN32D2LFB4-7 | DMN32D2LFB4-7 | 28AK8570 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LFB4-7 | 30V 300MA MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 0.3A, X2-Dfn1006 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 300 milliamps | ||||||
| PD | 350 milliwatts | 350 milliwatts | 350 milliwatts |