MOSFET 2N-CH 30V 0.4A SOT353 Product overview: DMN32D2LDF-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN32D2LDF-7 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) Common Source 30V 400mA 280mW Surface Mount SOT-353
Mosfet Array 2 N-Channel (Dual) Common Source 30V 400mA 280mW Surface Mount SOT-353
Mosfet Array 2 N-Channel (Dual) Common Source 30V 400mA 280mW Surface Mount SOT-353
Manufacturer: Diodes Incorporated
Win Source Part Number: 080577-DMN32D2LDF-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Family Name: DMN32D2LDF
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-353
Maximum Power Dissipation: 280mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 400mA
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Input Capacitance: 39pF @ 3V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 100mA, 4V
Alternative Parts (Cross-Reference): DMN32D2LDF;
Introduction Date: January 29, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
DUAL MOSFET, N-CH, 30V, 0.4A, SOT-353 ROHS COMPLIANT: YES
MOSFET 2N-CH 30V 0.4A SOT353
MOSFET 2N-CH 30V 0.4A SOT353
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMN32D2LDF-7 | DMN32D2LDF-7DIDKR-ND | 080577-DMN32D2LDF-7 | 88AH6199 | DMN32D2LDF-7 | DMN32D2LDF-7 | DMN32D2LDF-7 |
| Product Name | 30V 0.4A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LDF-7 | Dual Mosfet, N-Ch, 30V, 0.4A, Sot-353 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | FET, MOSFET Arrays |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) Common Source | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 280 milliwatts | 280 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
