DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LDF-7 DMN32D2LDF-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080577-DMN32D2LDF-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Source FET Feature: Logic Level Gate Family Name: DMN32D2LDF Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-353 Maximum Power Dissipation: 280mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 400mA Gate-Source Threshold Voltage: 1.2V @ 250μA Max Input Capacitance: 39pF @ 3V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 100mA, 4V Alternative Parts (Cross-Reference): DMN32D2LDF; Introduction Date: January 29, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080577-DMN32D2LDF-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Source FET Feature: Logic Level Gate Family Name: DMN32D2LDF Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-353 Maximum Power Dissipation: 280mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 400mA Gate-Source Threshold Voltage: 1.2V @ 250μA Max Input Capacitance: 39pF @ 3V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 100mA, 4V Alternative Parts (Cross-Reference): DMN32D2LDF; Introduction Date: January 29, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LDF-7 - 080577-DMN32D2LDF-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LDF-7
080577-DMN32D2LDF-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LDF-7 080577-DMN32D2LDF-7
Manufacturer: Diodes Incorporated Win Source Part Number: 080577-DMN32D2LDF-7 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Source FET Feature: Logic Level Gate Family Name: DMN32D2LDF Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-353 Maximum Power Dissipation: 280mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 400mA Gate-Source Threshold Voltage: 1.2V @ 250μA Max Input Capacitance: 39pF @ 3V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 100mA, 4V Alternative Parts (Cross-Reference): DMN32D2LDF; Introduction Date: January 29, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 080577-DMN32D2LDF-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Family Name: DMN32D2LDF
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-353
Maximum Power Dissipation: 280mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 400mA
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Input Capacitance: 39pF @ 3V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 100mA, 4V
Alternative Parts (Cross-Reference): DMN32D2LDF;
Introduction Date: January 29, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
30V 0.4A MOSFET Transistor
289-DMN32D2LDF-7
30V 0.4A MOSFET Transistor 289-DMN32D2LDF-7
MOSFET 2N-CH 30V 0.4A SOT353 Product overview: DMN32D2LDF-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN32D2LDF-7 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 0.4A SOT353 Product overview: DMN32D2LDF-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMN32D2LDF-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - DMN32D2LDF-7DIDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN32D2LDF-7DIDKR-ND
FET, MOSFET Arrays DMN32D2LDF-7DIDKR-ND
Mosfet Array 2 N-Channel (Dual) Common Source 30V 400mA 280mW Surface Mount SOT-353

Mosfet Array 2 N-Channel (Dual) Common Source 30V 400mA 280mW Surface Mount SOT-353

Buy Now Datasheet
FET, MOSFET Arrays - DMN32D2LDF-7DICT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN32D2LDF-7DICT-ND
FET, MOSFET Arrays DMN32D2LDF-7DICT-ND
Mosfet Array 2 N-Channel (Dual) Common Source 30V 400mA 280mW Surface Mount SOT-353

Mosfet Array 2 N-Channel (Dual) Common Source 30V 400mA 280mW Surface Mount SOT-353

Buy Now Datasheet
FET, MOSFET Arrays - DMN32D2LDF-7DITR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
DMN32D2LDF-7DITR-ND
FET, MOSFET Arrays DMN32D2LDF-7DITR-ND
Mosfet Array 2 N-Channel (Dual) Common Source 30V 400mA 280mW Surface Mount SOT-353

Mosfet Array 2 N-Channel (Dual) Common Source 30V 400mA 280mW Surface Mount SOT-353

Buy Now Datasheet
Dual Mosfet, N-Ch, 30V, 0.4A, Sot-353 Rohs Compliant Diodes Inc. - 88AH6199 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, N-Ch, 30V, 0.4A, Sot-353 Rohs Compliant Diodes Inc.
88AH6199
Dual Mosfet, N-Ch, 30V, 0.4A, Sot-353 Rohs Compliant Diodes Inc. 88AH6199
DUAL MOSFET, N-CH, 30V, 0.4A, SOT-353 ROHS COMPLIANT: YES

DUAL MOSFET, N-CH, 30V, 0.4A, SOT-353 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 350mw 30V DUAL

MOSFET 350mw 30V DUAL

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN32D2LDF-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN32D2LDF-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN32D2LDF-7
MOSFET 2N-CH 30V 0.4A SOT353

MOSFET 2N-CH 30V 0.4A SOT353

Supplier's Site
FET, MOSFET Arrays - DMN32D2LDF-7 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
DMN32D2LDF-7
FET, MOSFET Arrays DMN32D2LDF-7
MOSFET 2N-CH 30V 0.4A SOT353

MOSFET 2N-CH 30V 0.4A SOT353

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 080577-DMN32D2LDF-7 289-DMN32D2LDF-7 DMN32D2LDF-7DIDKR-ND 88AH6199 DMN32D2LDF-7 DMN32D2LDF-7 DMN32D2LDF-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN32D2LDF-7 30V 0.4A MOSFET Transistor FET, MOSFET Arrays Dual Mosfet, N-Ch, 30V, 0.4A, Sot-353 Rohs Compliant Diodes Inc. MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) Common Source
V(BR)DSS 30 volts 30 volts 30 volts
PD 280 milliwatts 280 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-353 Tape & Reel (TR) 5-TSSOP, SC-70-5, SOT-353 TO-3; SOT3 5-TSSOP, SC-70-5, SOT-353
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SC2682-AZ - 855146-2SC2682-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
GaAs Fet Switches - KCB828 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
250V 9.3A DPAK MOSFET Transistor - 278-AUIRFR4292TRL - ERSAELECTRONICS PTE. LTD.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 250 volts
View Details
7 suppliers
DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor - QPD0007 - Qorvo
Specs
Transistor Technology / Material DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type DFN
View Details