DIODES Incorporated FETs - Single - DMN31D5UFZ-7B DMN31D5UFZ-7B

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 800860-DMN31D5UFZ-7B Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 3-XFDFN Power Dissipation (Maximum): 393mW Popularity: High Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 10,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 1.5Ohm at 100mA, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 0.35nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 22.2pF at 15V Current - Continuous Drain (Id) at 25°C: 220mA Vgs(th) (Maximum) at Id: 1V at 250μA Maximum Vgs: ±12V
  • FETs - Single - DMN31D5UFZ-7B - 800860-DMN31D5UFZ-7B - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMN31D5UFZ-7BDITR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN31D5UFZ-7BDICT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN31D5UFZ-7BDIDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DMN31D5UFZ-7B - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN31D5UFZ-7B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 0.22A, X2-Dfn0603 Rohs Compliant Diodes Inc. - 28AK8563 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 800860-DMN31D5UFZ-7B Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 3-XFDFN Power Dissipation (Maximum): 393mW Popularity: High Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 10,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 1.5Ohm at 100mA, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 0.35nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 22.2pF at 15V Current - Continuous Drain (Id) at 25°C: 220mA Vgs(th) (Maximum) at Id: 1V at 250μA Maximum Vgs: ±12V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - DMN31D5UFZ-7B - 800860-DMN31D5UFZ-7B - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - DMN31D5UFZ-7B
800860-DMN31D5UFZ-7B
FETs - Single - DMN31D5UFZ-7B 800860-DMN31D5UFZ-7B
Manufacturer: Diodes Incorporated Win Source Part Number: 800860-DMN31D5UFZ-7B Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 3-XFDFN Power Dissipation (Maximum): 393mW Popularity: High Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 10,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 1.5Ohm at 100mA, 4.5V Gate Charge (Qg) (Maximum) at Vgs: 0.35nC at 4.5V Input Capacitance (Ciss) (Maximum) at Vds: 22.2pF at 15V Current - Continuous Drain (Id) at 25°C: 220mA Vgs(th) (Maximum) at Id: 1V at 250μA Maximum Vgs: ±12V

Manufacturer: Diodes Incorporated
Win Source Part Number: 800860-DMN31D5UFZ-7B
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 3-XFDFN
Power Dissipation (Maximum): 393mW
Popularity: High
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 100mA, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 0.35nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 22.2pF at 15V
Current - Continuous Drain (Id) at 25°C: 220mA
Vgs(th) (Maximum) at Id: 1V at 250μA
Maximum Vgs: ±12V

Buy Now
Single FETs, MOSFETs - DMN31D5UFZ-7BDITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN31D5UFZ-7BDITR-ND
Single FETs, MOSFETs DMN31D5UFZ-7BDITR-ND
N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3

N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN31D5UFZ-7BDICT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN31D5UFZ-7BDICT-ND
Single FETs, MOSFETs DMN31D5UFZ-7BDICT-ND
N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3

N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN31D5UFZ-7BDIDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN31D5UFZ-7BDIDKR-ND
Single FETs, MOSFETs DMN31D5UFZ-7BDIDKR-ND
N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3

N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - DMN31D5UFZ-7B - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN31D5UFZ-7B
Single FETs, MOSFETs DMN31D5UFZ-7B
MOSFET N-CH 30V 220MA 3DFN

MOSFET N-CH 30V 220MA 3DFN

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN31D5UFZ-7B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN31D5UFZ-7B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN31D5UFZ-7B
MOSFET N-CH 30V 220MA 3DFN

MOSFET N-CH 30V 220MA 3DFN

Supplier's Site
Mosfet, N-Ch, 30V, 0.22A, X2-Dfn0603 Rohs Compliant Diodes Inc. - 28AK8563 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 0.22A, X2-Dfn0603 Rohs Compliant Diodes Inc.
28AK8563
Mosfet, N-Ch, 30V, 0.22A, X2-Dfn0603 Rohs Compliant Diodes Inc. 28AK8563
MOSFET, N-CH, 30V, 0.22A, X2-DFN0603 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 0.22A, X2-DFN0603 ROHS COMPLIANT: YES

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN31D5UFZ-7B
MOSFET DMN31D5UFZ-7B
MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W

MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 800860-DMN31D5UFZ-7B DMN31D5UFZ-7BDITR-ND DMN31D5UFZ-7B DMN31D5UFZ-7B 28AK8563 DMN31D5UFZ-7B
Product Name FETs - Single - DMN31D5UFZ-7B Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 0.22A, X2-Dfn0603 Rohs Compliant Diodes Inc. MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 393 milliwatts 393 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 3-XFDFN 3-XFDFN 3-XFDFN TO-3
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