N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3
N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3
N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 800860-DMN31D5UFZ-7B
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 3-XFDFN
Power Dissipation (Maximum): 393mW
Popularity: High
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 100mA, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 0.35nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 22.2pF at 15V
Current - Continuous Drain (Id) at 25°C: 220mA
Vgs(th) (Maximum) at Id: 1V at 250μA
Maximum Vgs: ±12V
MOSFET N-CH 30V 220MA 3DFN
MOSFET, N-CH, 30V, 0.22A, X2-DFN0603 ROHS COMPLIANT: YES
MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W
MOSFET N-CH 30V 220MA 3DFN
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN31D5UFZ-7BDITR-ND | 800860-DMN31D5UFZ-7B | DMN31D5UFZ-7B | 28AK8563 | DMN31D5UFZ-7B | DMN31D5UFZ-7B |
| Product Name | Single FETs, MOSFETs | FETs - Single - DMN31D5UFZ-7B | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 0.22A, X2-Dfn0603 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | 3-XFDFN | SOT3 | 3-XFDFN | TO-3 | 3-XFDFN | |
| PD | 393 milliwatts | 393 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
