MOSFET N-CH 30V 220MA 3DFN Product overview: DMN31D5UFZ-7B from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 220MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 220MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMN31D5UFZ-7B can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 220MA 3DFN
N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3
N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3
N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 800860-DMN31D5UFZ-7B
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 3-XFDFN
Power Dissipation (Maximum): 393mW
Popularity: High
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 100mA, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 0.35nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 22.2pF at 15V
Current - Continuous Drain (Id) at 25°C: 220mA
Vgs(th) (Maximum) at Id: 1V at 250μA
Maximum Vgs: ±12V
MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W
MOSFET, N-CH, 30V, 0.22A, X2-DFN0603 ROHS COMPLIANT: YES
MOSFET N-CH 30V 220MA 3DFN
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMN31D5UFZ-7B | DMN31D5UFZ-7B | DMN31D5UFZ-7BDICT-ND | 800860-DMN31D5UFZ-7B | DMN31D5UFZ-7B | 28AK8563 | DMN31D5UFZ-7B |
| Product Name | 30V 220MA MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - DMN31D5UFZ-7B | MOSFET | Mosfet, N-Ch, 30V, 0.22A, X2-Dfn0603 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 393 milliwatts | 393 milliwatts | 393 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
