DMN31D5UDR4-7 is a dual N-channel enhancement mode MOSFET in an X2-DFN1010-6 package, measuring 1.0 mm × 1.0 mm, designed for high-efficiency power management. It has a drain-source voltage rating of 30 V, continuous drain current of 0.5 A at 25°C, and on-resistance of 1.5 Ω at VGS = 4.5 V and 2.0 Ω at VGS = 2.5 V. The device features ESD-protected gates, fast switching, and low leakage. It is RoHS compliant, halogen- and antimony-free, and meets AEC-Q200 standards for automotive applications. Thermal resistance is 335 °C/W on a standard PCB and 188 °C/W with an extended copper area. Operating temperature ranges from -55°C to +150°C.
MOSFET 2N-CH 30V 0.5A 6DFN
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 31-DMN31D5UDR4-7TR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 6-XFDFN Exposed Pad |
